Semiconductor Field-Control Element for High Voltage
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Solution Overview
Problem
Semiconductor devices face a challenge in optimizing design for both low-frequency and high-frequency operations, as requirements for low on-resistance and high breakdown voltage are conflicting, leading to compromised performance in maximum operating frequency and capacitance.
Innovation Solution
Incorporating a low conducting field-controlling element with a sheet resistance between 10^3 and 10^7 Ohms per square, which behaves like a metal at low frequencies and an insulator at high frequencies, to enhance electric field control and reduce capacitance, thereby improving high voltage and microwave characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If the channel length is minimized to reduce on-resistance, then low-frequency performance is improved, but breakdown voltage decreases
Solution Approach 1:
A field-controlling element is introduced as an intermediary component between the gate and drain electrodes. This element modifies the electric field distribution in the gate-drain spacing, allowing the device to withstand high voltages without breakdown while maintaining a short channel length for low on-resistance.
Solution Approach 2:
The field-controlling element changes the electrical parameters of the device by modifying the electric field distribution. By controlling the field concentration and distribution patterns, the device achieves both high breakdown voltage and low on-resistance characteristics that would otherwise be contradictory.
2Reliability
If a field-modulating plate is added to increase breakdown voltage, then high voltage capability is improved, but inter-electrode capacitance increases
Solution Approach 1:
The field-controlling element is designed with specific electrical parameters (conductivity, dimensions, positioning) that allow it to control the electric field while minimizing capacitance effects. By optimizing these parameters, the element increases breakdown voltage without significantly increasing inter-electrode capacitance, thus preserving high-frequency performance.
3Speed
If the channel is fully depleted to reduce capacitance, then high-frequency performance is improved, but low-frequency conductivity decreases
Solution Approach 1:
The field-controlling element creates local variations in the electric field and carrier distribution within the channel. By selectively depleting or enhancing carrier concentrations in specific regions, the device achieves low capacitance for high-frequency operation while maintaining sufficient conductivity for low-frequency performance through localized carrier accumulation regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly increases breakdown voltage, maintains low capacitance at high frequencies, and enhances the frequency range and power handling capabilities of semiconductor devices.
Implementation Method 1
The field-controlling element can be formed of a low conducting material having a sheet resistance between approximately 10^3 Ohms per square and approximately 10^7 Ohms per square. During direct current and/or low frequency operation, the field-controlling element can behave similar to a metal electrode. However, during high frequency operation, the field-controlling element can behave similar to an insulator.
Data Source
AI summary
A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region, and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer having a sheet resistance between approximately 103 Ohms per square and approximately 107 Ohms per square. During direct current and/or low frequency operation, the field-controlling element can behave similar to a metal electrode. However, during high frequency operation, the field-controlling element can behave similar to an insulator.