Semiconductor Device With Low-Conducting Field-Control Element
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Solution Overview
Problem
Semiconductor devices face a challenge in optimizing design for both low-frequency and high-frequency operations, as requirements for low on-resistance and high breakdown voltage are conflicting, leading to compromised performance in maximum operating frequency and capacitance.
Innovation Solution
Incorporating a low conducting field-controlling element with specific lateral resistance characteristics that behaves like a metal at low frequencies and an insulator at high frequencies, allowing for improved electric field distribution and increased breakdown voltage without compromising frequency performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the total channel length is minimized to reduce on-resistance, then low-frequency performance improves, but the distance between gate and drain must be increased to withstand high voltage, creating a design conflict
Solution Approach 1:
The gate electrode is segmented into multiple sections with different potentials. The gate is divided into a first gate section and a second gate section, with the first gate section at a first potential and the second gate section at a second potential. This segmentation allows the gate to provide both the short channel length needed for low on-resistance and the sufficient gate-drain distance for high breakdown voltage by creating an optimized electric field distribution along the channel.
2Reliability
If a field-modulating plate is added to increase breakdown voltage, then high voltage withstand capability improves, but inter-electrode capacitances increase, reducing maximum operating frequency
Solution Approach 1:
The gate electrode potential distribution is made dynamic and controllable through multiple gate sections that can be independently biased. By adjusting the potentials of different gate sections, the electric field distribution can be dynamically optimized for different operating conditions, achieving both high breakdown voltage and high frequency performance without the need for additional field-modulating plates that would increase capacitance.
3Speed
If the channel is fully depleted to reduce capacitance, then maximum operating frequency improves, but device control capability at low frequencies deteriorates
Solution Approach 1:
Different regions of the gate electrode are assigned different potentials to create local quality variations in the electric field. The first gate section and second gate section provide different local field conditions that can be independently controlled, enabling full channel depletion for high frequency operation while maintaining adequate control capability for low frequency applications through appropriate potential distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the semiconductor device's frequency range, operating voltage, and maximum power handling capabilities, achieving a two-fold increase in breakdown voltage and improved frequency performance compared to prior art.
Implementation Method 1
The field-controlling element can be formed of a low conducting layer of material and can have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device. The field-controlling element can behave similar to a metal electrode at direct current and/or low frequencies. However, within the device operating frequency range, the field-controlling element can behave similar to an insulator.
Data Source
AI summary
A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.