Power Semiconductor Field Effect Rectifier Switching Speed
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Solution Overview
Problem
The switching speed of power semiconductors is limited by the reverse recovery time of the body diode, and existing methods to address this, such as integrating a Schottky diode, complicate the fabrication process and increase costs.
Innovation Solution
A power semiconductor structure with a field effect rectifier is developed, featuring a current channel that prevents the body diode from turning on, enhancing switching speed by forming a current channel in parallel with the gate channel, which can be integrated into the existing fabrication process without additional complexity or cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a Schottky diode is integrated to replace the body diode, then switching speed is improved, but fabrication process complexity increases
Solution Approach 1:
The patent merges the rectifier function into the existing transistor structure by forming a current channel within the body region that operates in parallel with the gate channel. This integration eliminates the need for separate Schottky diode fabrication steps while achieving the same switching speed improvement by preventing body diode turn-on.
Solution Approach 2:
The transistor structure is designed to perform multiple functions: the gate channel controls current flow during normal operation, while the integrated current channel in the body region provides rectifier functionality by blocking reverse current. This multi-functionality eliminates the need for separate Schottky diode components.
2Speed
If a Schottky diode is integrated to replace the body diode, then switching speed is improved, but manufacturing cost increases
Solution Approach 1:
The rectifier function is merged into the transistor fabrication process itself. By forming the current channel during standard transistor manufacturing steps (using the same ion implantation and thermal processing), no additional manufacturing equipment or materials are required, thereby avoiding cost increases while achieving improved switching speed.
Solution Approach 2:
The transistor structure serves its own rectifier function through the integrated current channel, eliminating the need for separate Schottky diode components and their associated fabrication costs. The body region itself provides the rectifying action through the field effect mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively enhances switching speed by preventing the body diode from turning on, similar to a Schottky diode, while maintaining a straightforward and cost-effective fabrication process.
Implementation Method 1
a field effect rectifier as a current channel to prevent the body diode of the transistor from being turned on so as to enhance switching speed of transistors
Data Source
AI summary
A power semiconductor structure with a field effect rectifier having a drain region, a body region, a source region, a gate channel, and a current channel is provided. The body region is substantially located above the drain region. The source region is located in the body region. The gate channel is located in the body region and adjacent to a gate structure. The current channel is located in the body region and is extended from the source region downward to the drain region. The current channel is adjacent to a conductive structure coupled to the source region.