Semiconductor Field Plate Layout for Higher Breakdown Voltage
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high breakdown voltage due to excessive electric field concentration at corners or edges of the drain and source regions, leading to potential breakdowns.
Innovation Solution
The semiconductor device incorporates a conductive field plate and/or a lightly doped well that overlap the edge of the active region, distributing the electric field uniformly and reducing the likelihood of excessive field concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor device structure is used, then device simplicity is maintained, but breakdown voltage is insufficient due to excessive electric field concentration at corners or edges
Solution Approach 1:
A conductive field plate is introduced as an intermediary element between the gate and the drain/source regions. This field plate extends over the edge of the active region and acts as a mediator to distribute the electric field uniformly, preventing excessive field concentration at corners or edges while maintaining overall device functionality
Solution Approach 2:
The field plate extends in a direction transverse to the gate length direction, adding a dimensional element that overlaps the edge of the active region. This dimensional extension allows the electric field to be distributed along the edge rather than concentrated at specific points, thereby improving breakdown voltage without significantly increasing device complexity
2Reliability
If field plate is added to distribute electric field, then breakdown voltage is improved, but device complexity increases
Solution Approach 1:
The field plate is designed to serve multiple functions: it distributes the electric field to improve breakdown voltage, and it can be integrated with existing gate structures. The field plate extends in a transverse direction and overlaps the active region edge, providing electric field management while maintaining compatibility with standard device architectures
Solution Approach 2:
The field plate is positioned specifically at the edge of the active region where electric field concentration is most problematic. By applying the conductive field plate only in this critical local area rather than throughout the entire device, the solution improves breakdown voltage with minimal increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the breakdown voltage of the semiconductor device by ensuring a more uniform electric field distribution along the edge of the active region, thereby enhancing its ability to withstand high gate voltages without damage or irregular current behavior.
Implementation Method 1
The presence of a field plate and/or a lightly doped well results in an approximately uniform electric field distribution along the edge of the active region
Implementation Method 2
The presence of a field plate and/or a lightly doped well results in an approximately uniform electric field distribution along the edge of the active region
Data Source
AI summary
A semiconductor device includes an isolation structure in a substrate. The semiconductor device further includes a gate structure over a first region of the substrate, wherein the isolation structure surrounds the first region, the gate structure comprising a first section and a second section. The semiconductor device further includes a conductive field plate over the substrate, the conductive field plate extending between the first section and the second section and overlapping an edge of the first region, wherein the conductive field plate comprises a dielectric layer having a variable thickness. The semiconductor device further includes a first well in the substrate, wherein the first well overlaps the edge of the first region, and the first well extends underneath the isolation structure, and the conductive field plate extends beyond an outer-most edge of the first well.