Semiconductor Field Plate Heat Dissipation via Conductive Structure
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Solution Overview
Problem
Existing semiconductor devices, particularly high-electron mobility transistors (HEMTs), face challenges in heat dissipation and electric field management, leading to reduced operational efficiency and breakdown issues due to high current density.
Innovation Solution
A composite substrate with high thermal conductivity is used, and a field plate is electrically connected to the substrate through a conductive structure, penetrating through the semiconductor layers to dissipate heat and reduce the electric field, thereby enhancing the operational efficiency of high current density semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high current density is used to increase power output, then power output is improved, but heat generation and electric field intensity increase leading to breakdown issues
Solution Approach 1:
The patent extracts the heat dissipation function from the substrate by introducing a separate conductive structure that penetrates through the semiconductor layers to connect the field plate directly to the substrate. This dedicated heat dissipation path removes thermal energy away from the high current density regions, preventing thermal breakdown while maintaining high power output capability
Solution Approach 2:
The conductive structure acts as an intermediary element between the field plate and the substrate. It provides a direct electrical and thermal connection path that mediates the heat transfer from the high current density regions to the substrate, enabling efficient heat removal without requiring the substrate itself to have extremely high thermal conductivity
2Reliability
If field plate is electrically connected to substrate through conductive structure, then heat dissipation and electric field reduction are improved, but device structure complexity increases
Solution Approach 1:
The conductive structure performs multiple functions simultaneously: it provides electrical connection between the field plate and substrate, serves as a heat dissipation path, and acts as a structural support element. By combining multiple functions into a single component, the patent reduces overall device complexity while achieving effective heat dissipation and electric field management
Solution Approach 2:
The patent merges the electrical connection function and heat dissipation function into a single conductive structure. Instead of having separate electrical interconnects and thermal management systems, the conductive structure that connects the field plate to the substrate simultaneously handles both electrical signal transmission and thermal energy removal, simplifying the overall device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves the operational efficiency of semiconductor devices by effectively managing heat dissipation and reducing electric field intensity, mitigating breakdown issues and maintaining high breakdown voltage, thus expanding the applicable voltage range.
Implementation Method 1
a conductive structure penetrating through the second III-V group compound semiconductor layer and the first composite III-V group compound semiconductor layer, wherein the field plate is electrically connected to the composite substrate through the conductive structure
Implementation Method 2
a composite substrate with high thermal conductivity coefficient is used, and a field plate disposed between a gate structure and a drain electrode is electrically connected to the composite substrate through a conductive structure, so as to achieve the purpose of heat dissipation
Implementation Method 3
a composite substrate with high thermal conductivity coefficient is used... achieve the purpose of heat dissipation
Implementation Method 4
a composite substrate with high thermal conductivity coefficient is used, and a field plate disposed between a gate structure and a drain electrode is electrically connected to the composite substrate through a conductive structure, so as to achieve the purpose of heat dissipation
Implementation Method 5
a field plate disposed between a gate structure and a drain electrode is electrically connected to the composite substrate through a conductive structure, so as to achieve the purpose of heat dissipation and reducing the electric field
Data Source
AI summary
A semiconductor device includes a first composite III-V group compound semiconductor layer disposed on a composite substrate, and a second III-V group compound semiconductor layer disposed on the first composite III-V group compound semiconductor layer. The semiconductor device also includes a gate structure disposed on the second III-V group compound semiconductor layer, and a source electrode and a drain electrode disposed on the second III-V group compound semiconductor layer and at opposite sides of the gate structure. The semiconductor device further includes a field plate disposed between the gate structure and the drain electrode, and a conductive structure penetrating through the second III-V group compound semiconductor layer and the first composite III-V group compound semiconductor layer, wherein the field plate is electrically connected to the composite substrate through the conductive structure.