Semiconductor Termination Field Plate Electrode Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices with a super junction structure, the electric field in the termination region can lead to ions accumulating in the insulating layer, causing local charging of the semiconductor surface, which extends the depletion layer and lowers the breakdown voltage.
Innovation Solution
The semiconductor device incorporates a field plate electrode with specific intervals between its portions to reduce the electric field strength and prevent ion accumulation, thereby maintaining a higher breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a super junction structure is used in the termination region, then the breakdown voltage and on-resistance relationship is improved, but ions accumulate in the insulating layer under electric field, causing local charging and extending the depletion layer, which lowers the breakdown voltage
Solution Approach 1:
The patent extracts and removes ions from the insulating layer by introducing a conductive layer that collects and drains the accumulated ions, preventing them from causing local charging and depletion layer extension in the termination region
Solution Approach 2:
The patent introduces a conductive layer as an intermediary between the insulating layer and the semiconductor substrate. This conductive layer acts as an ion collection and drainage path, preventing ions from accumulating in the insulating layer and causing harmful local charging effects
2Power
If the electric field strength is increased to improve device performance, then the breakdown voltage is compromised due to ion movement and accumulation, but reducing the electric field strength lowers device efficiency
Solution Approach 1:
The patent converts the harmful effect of strong electric fields (which cause ion accumulation) into a beneficial outcome by using the same electric field to drive ions toward the conductive layer for collection and drainage, thereby maintaining both high power performance and breakdown voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration of the field plate electrode effectively suppresses the lowering of breakdown voltage by reducing electric field strength and ion charging on the semiconductor surface, enhancing the device's performance.
Implementation Method 1
when an electric field is applied to a semiconductor region surface of the termination region, ions contained in an insulating layer formed on the semiconductor region of the termination region move in the insulating layer as a result of the electric field
Implementation Method 2
ions contained in an insulating layer formed on the semiconductor region of the termination region move in the insulating layer as a result of the electric field
Data Source
AI summary
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided in the first semiconductor region, an element region, and a termination region. The element region includes a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, and a gate electrode disposed on a gate insulating layer that extends adjacent the third semiconductor region and the fourth semiconductor region. The termination region surrounds the element region and includes a first electrode, which includes first portions extending in a first direction and second portions extending in a second direction. A plurality of first electrodes are provided on the first semiconductor region and the second semiconductor region. An interval between adjacent first portions in the second direction is less than an interval between adjacent second portions in the first direction.