Semiconductor Field Plate Layout for Breakdown and On-Resistance
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high breakdown voltage and reducing on-resistance while maintaining efficient electric field distribution, leading to limitations in device performance and density.
Innovation Solution
The semiconductor device incorporates a specific configuration of electrodes, conductive members, and insulating regions, including a field plate structure that controls potential differences and electric field distribution, utilizing a conductive member with a field plate function to relax the electric field and enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure is used, then the manufacturing process is simple, but the breakdown voltage is limited and on-resistance cannot be sufficiently reduced
Solution Approach 1:
The semiconductor device is segmented into multiple functional regions including a first semiconductor region, second semiconductor region, third semiconductor region, fourth semiconductor region, and fifth semiconductor region with different conductivity types. This segmentation allows independent optimization of each region's electrical characteristics, enabling high breakdown voltage in the drift region while maintaining low on-resistance through optimized source/drain regions.
Solution Approach 2:
Different regions of the semiconductor device are assigned different local properties: the first semiconductor region has high carrier concentration for low contact resistance, the second region has optimized doping for current conduction, the third region serves as a buffer, the fourth region provides high breakdown voltage capability, and the fifth region ensures proper electrical connection. This local quality differentiation resolves the contradiction between breakdown voltage and on-resistance.
2Productivity
If device density is increased, then productivity improves, but electric field concentration increases leading to reduced breakdown voltage
Solution Approach 1:
The patent introduces a vertical dimension with multiple semiconductor regions stacked in the depth direction, allowing electric field management in three dimensions. The graded doping structure across vertical layers enables high device density in the planar direction while maintaining proper electric field distribution vertically, preventing field concentration that would limit breakdown voltage.
Solution Approach 2:
The doping concentration is systematically changed across different regions: the first semiconductor region has high carrier concentration, the second region has optimized doping levels, the third region serves as a transition zone, and the fourth region has doping optimized for breakdown characteristics. These parameter changes enable high device density while maintaining high breakdown voltage through proper electric field distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a high breakdown voltage, reduces on-resistance, and increases device density by minimizing electric field concentration and charge capacitance, thereby improving overall semiconductor device performance.
Implementation Method 1
a field plate structure that controls potential differences and electric field distribution, utilizing a conductive member with a field plate function to relax the electric field and enhance breakdown voltage
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, and an insulating part region. The second electrode includes a first electrode portion. The semiconductor member includes a first semiconductor region. The first semiconductor region includes first to third partial regions. The first partial region is between the first electrode and the first electrode portion. The second partial region is between the first and third electrodes. The third partial region is between the first partial region and the first electrode portion. The third partial region includes first and second positions. The second position is between the first partial region and the first position. The first conductive member includes first and second portions. The first portion is between the second partial region and the third electrode. The insulating part region includes first and second insulating regions.