Semiconductor Film Deposition With Temperature-Switched Adsorption Inhibition
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in maintaining selectivity during film growth on substrates with multiple base types, as existing methods struggle to selectively form films on specific bases without etching or damaging adjacent surfaces.
Innovation Solution
A method involving the use of an adsorption inhibitor, such as ClF3, is applied to a substrate at a specific temperature to modify the surface of one base type, preventing film formation, while a processing gas is used at a higher temperature to form a film on another base type, and the adsorption inhibitor is removed at an even higher temperature to restore selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a processing gas is supplied to form a film on the substrate, then film formation is achieved, but selectivity between different base types deteriorates
Solution Approach 1:
The adsorption inhibitor is supplied before the processing gas to pre-modify the substrate surface. This preliminary action creates a protective layer on specific base types (e.g., SiO2) that prevents unwanted film formation, while allowing film formation on other base types (e.g., SiN) to proceed selectively.
Solution Approach 2:
The adsorption inhibitor acts as an intermediary substance between the processing gas and the substrate. It temporarily modifies the surface properties of specific base types, preventing direct reaction with the processing gas and thereby enabling selective film formation on desired base types only.
2Productivity
If the substrate temperature is increased to form a film, then film formation efficiency is improved, but the adsorption inhibitor remains adsorbed reducing selectivity
Solution Approach 1:
The process uses periodic temperature changes: first heating to a moderate temperature (e.g., 200-400°C) for controlled adsorption of the inhibitor, then heating to a higher temperature (e.g., 400-600°C) for efficient film formation, and finally heating to an even higher temperature to remove the inhibitor. This periodic temperature action resolves the contradiction between maintaining inhibitor adsorption and achieving efficient film formation.
Solution Approach 2:
The process dynamically changes the temperature parameter throughout the manufacturing sequence. By adjusting temperature at different stages (adsorption stage, film formation stage, removal stage), the process optimizes both selectivity and productivity at each phase, resolving the contradiction between maintaining inhibitor adsorption and achieving efficient film formation.
3Productivity
If the adsorption inhibitor is supplied at high temperature, then film formation is promoted, but the adsorption inhibitor adsorption is reduced
Solution Approach 1:
The adsorption inhibitor is supplied at a lower temperature first to ensure adequate adsorption on the substrate surface. This preliminary adsorption step is crucial for establishing the selective protection needed before film formation begins. Only after the inhibitor is properly adsorbed does the process proceed to higher temperatures for film formation.
Solution Approach 2:
The temperature is periodically adjusted during the process: initially maintained at a moderate level for inhibitor adsorption, then raised for film formation. This periodic temperature control ensures that the inhibitor adsorbs effectively before being exposed to conditions that would promote film formation, resolving the contradiction between adsorption and film formation promotion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective growth and formation of high-quality films on specific base types without etching or damaging adjacent surfaces, maintaining selectivity throughout the process.
Implementation Method 1
supplying an adsorption inhibitor to adsorb the adsorption inhibitor to a first portion of a substrate in a process chamber by heating the substrate to a first temperature
Implementation Method 2
supplying a processing gas after the act of supplying the adsorption inhibitor to form a film on a second portion of the substrate where the adsorption inhibitor is not adsorbed by heating the substrate to a second temperature higher than the first temperature
Implementation Method 3
removing the adsorption inhibitor after the act of supplying the processing gas to remove the adsorption inhibitor adsorbed to the substrate by heating the substrate to a third temperature higher than the second temperature
Data Source
AI summary
There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate by supplying the first adsorption inhibitor to the substrate at a first temperature; (b) after (a), forming a film on a second portion of the substrate by supplying a processing gas to the substrate at a second temperature; (c) after (b), removing at least a part of the first adsorption inhibitor, which is adsorbed to the substrate, at a third temperature higher than the second temperature; (d) after (c), supplying a second adsorption inhibitor to the substrate at a fourth temperature; (e) after (d), supplying the processing gas to the substrate at the second temperature higher than the fourth temperature; and (f) after (e), removing at least a part of the second adsorption inhibitor, which is adsorbed to the substrate, at the third temperature higher than the second temperature.