Semiconductor Film Deposition for Precise Composition Control
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in controlling the composition ratio of films formed on substrates, particularly in achieving precise ratios of elements like silicon, boron, carbon, and nitrogen.
Innovation Solution
A technique involving the simultaneous supply of a first precursor containing silicon-nitrogen and silicon-carbon bonds, and a pseudo catalyst containing a Group 13 element, without supplying substances with nitrogen-hydrogen bonds, to form a film on a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form films on substrates, then film formation can be achieved, but the composition ratio of elements in the film cannot be precisely controlled
Solution Approach 1:
The film formation process is segmented into distinct stages: a first stage forming a film with initial composition, and a second stage adjusting the composition ratio. This segmentation allows precise control over the final film composition by independently optimizing each stage's parameters.
Solution Approach 2:
The first precursor is supplied in advance to form an initial film layer with desired base composition. This preliminary action establishes a foundation that is later refined by the second precursor, enabling precise composition control through staged material introduction.
2Reliability
If nitrogen-hydrogen containing substances are supplied during film formation, then nitrogen can be incorporated into the film, but oxidation resistance deteriorates
Solution Approach 1:
The method extracts nitrogen from nitrogen-hydrogen compounds and introduces it through alternative precursors that do not contain nitrogen-hydrogen bonds. This extraction of the harmful hydrogen component while retaining the useful nitrogen function achieves both nitrogen incorporation and oxidation resistance.
Solution Approach 2:
The patent uses intermediary substances (first and second precursors) that serve as mediators to introduce nitrogen into the film without introducing nitrogen-hydrogen bonds. These intermediaries enable indirect nitrogen incorporation that preserves oxidation resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the controllability of the film's composition ratio, enhances the film's oxidation resistance, and allows for the formation of high-quality films with specific properties suitable for applications like hard masks and low dielectric constant films.
Implementation Method 1
forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate
Data Source
AI summary
There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.