Semiconductor Film Deposition with Opposed Inert Gas Flow Balancing
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Solution Overview
Problem
Existing methods struggle to effectively control the in-plane film thickness distribution of films formed on semiconductor substrates during the manufacturing process.
Innovation Solution
A substrate processing apparatus is used to form films by controlling the balance between the flow rates of inert gases supplied from different nozzles, adjusting the film thickness distribution by manipulating the flow rates of inert gases from opposing nozzles relative to a central processing gas nozzle.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed on a substrate using conventional single-source gas supply, then the film formation process is simple, but the in-plane film thickness distribution cannot be effectively controlled
Solution Approach 1:
The gas supply system is segmented into multiple independent sources: a first inert gas source, a second inert gas source, and a processing gas source. Each source can be controlled independently to deliver gas to different regions of the substrate, enabling precise control over film thickness distribution through flow rate adjustments of each segment.
Solution Approach 2:
Different regions of the substrate receive different gas flow conditions to achieve desired local film properties. The first and second inert gas sources are positioned to supply gas to different areas, allowing the formation of films with specific thickness profiles (central convex, flat, or central concave) by adjusting the local gas flow rates from each source.
2Manufacturing precision
If multiple gas sources are used to control film thickness distribution, then precise film profile control is achieved, but the system complexity increases
Solution Approach 1:
The multiple gas supply sources serve multiple functions: they control film thickness distribution, adjust film profile shape (central convex, flat, or central concave), and maintain process flexibility. The inert gases from different sources work together with the processing gas to achieve various film formation objectives, making the system multi-functional despite increased complexity.
Solution Approach 2:
The system controls film thickness distribution by changing the flow rate parameters of the inert gases from different sources. By adjusting these flow rate parameters, the film profile can be transformed between central convex, flat, and central concave distributions, providing precise control through parameter modification rather than complex mechanical adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of film thickness distribution, enabling the formation of films with desired profiles such as central convex, flat, or central concave distributions, enhancing the manufacturing process of semiconductor devices.
Implementation Method 1
supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate
Implementation Method 2
forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier
Data Source
AI summary
There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the act of forming the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.