Suppressing Surface Irregularities in Semiconductor Film Formation
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Solution Overview
Problem
The existing methods for forming semiconductor layers, such as silicon, germanium, and silicon-germanium films, often result in surface irregularities like 'pyramid-like facets' and 'cross hatch patterns' due to lattice constant differences and crystallization issues during epitaxial growth on single-crystallized substrates.
Innovation Solution
A method and apparatus that suppress crystallization on the substrate surface by using a crystallization suppressing process gas, such as phosphine, to change the lattice constant and form an amorphous film, followed by solid-phase epitaxial growth to minimize surface irregularities and facilitate smooth film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If epitaxial growth is performed on a single-crystallized substrate, then a crystallized semiconductor film is formed, but surface irregularities such as facets or cross hatch patterns are generated
Solution Approach 1:
The patent applies preliminary action by performing a crystallization suppressing process before the epitaxial growth step. This preliminary treatment modifies the substrate surface to prevent the formation of facets and cross hatch patterns during subsequent crystallized film growth, thereby achieving smooth surfaces without compromising the crystallized structure
Solution Approach 2:
The patent changes physical parameters by introducing a crystallization suppressing process that modifies the lattice constant of the substrate surface. This parameter change prevents the generation of surface irregularities while maintaining the ability to form high-quality crystallized semiconductor films
2Ease of manufacture
If an amorphous film is deposited on a single-crystallized substrate, then film formation is achieved, but the lattice constant of the substrate drags the amorphous film making it hard to grow
Solution Approach 1:
The patent applies preliminary action by performing the crystallization suppressing process before amorphous film deposition. This preliminary treatment creates a substrate surface that does not drag the lattice constant, enabling proper amorphous film formation and growth
Solution Approach 2:
The crystallization suppressing process acts as an intermediary treatment between the single-crystallized substrate and the amorphous film. It modifies the substrate surface properties to be compatible with amorphous film deposition, preventing lattice constant dragging while maintaining substrate integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the generation of surface irregularities, allowing for the formation of smooth crystallized silicon, germanium, or silicon-germanium films on single-crystallized substrates, enhancing the quality and uniformity of semiconductor layers.
Implementation Method 1
supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed
Implementation Method 2
supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece
Implementation Method 3
performing a thermal treatment on the formed amorphous Si layer and performing a solid-phase epitaxial growth using an exposed surface of the single-crystallized Si as a seed
Data Source
AI summary
There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.