Low-Temperature Semiconductor Film Formation via pKa-Optimized Catalyst
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Solution Overview
Problem
Current semiconductor device manufacturing methods require high-temperature processing for film formation, which leads to impurity rediffusion and environmental concerns with catalysts like pyridine, necessitating a low-temperature alternative.
Innovation Solution
A semiconductor device manufacturing method involving a substrate processing apparatus that uses a source gas, a modification gas with electronegative atoms, and a catalyst with an acid dissociation constant pKa between 5 and 7, but not pyridine, to form oxide or nitride films at low temperatures, while maintaining the process chamber pressure below the vapor pressure of reaction byproducts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-temperature processing is used for film formation, then film growing rate is improved, but impurity rediffusion increases
Solution Approach 1:
The patent changes the chemical parameters of the reaction system by introducing a catalyst with specific pKa value (5-7) and using a modification gas with electronegative atoms. This allows the film formation reaction to proceed at lower temperatures (reducing impurity rediffusion) while maintaining practical film growing rates through enhanced surface reactivity.
Solution Approach 2:
The catalyst acts as an intermediary substance that facilitates the reaction between the source gas and substrate. By selecting a catalyst with specific acid dissociation constant (pKa 5-7), the patent enables low-temperature film formation without requiring high thermal energy, thus preventing impurity rediffusion while maintaining productivity.
2Temperature
If pyridine is used as a catalyst for low-temperature processing, then process temperature is reduced, but environmental pollution increases
Solution Approach 1:
The patent replaces pyridine with alternative catalysts having specific pKa values (5-7) that are less environmentally harmful. These alternative catalysts achieve the same low-temperature film formation function without the severe air pollution and odor issues associated with pyridine, making them more acceptable for industrial use.
Solution Approach 2:
The patent specifies a particular range for the acid dissociation constant (pKa 5-7) of the catalyst to achieve optimal low-temperature processing. This parameter optimization allows effective film formation at reduced temperatures using environmentally friendlier alternatives to pyridine, balancing performance with environmental concerns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of films at low temperatures, reducing impurity rediffusion and environmental impact, with improved film-forming rates and reduced particle generation.
Implementation Method 1
Since a catalyst reduces the activation energy of a source gas applied to a substrate, the process temperature can be reduced.
Implementation Method 2
exposing the substrate to a modification gas comprising an oxidizing gas or a nitriding gas
Implementation Method 3
exposing the substrate to a modification gas comprising an oxidizing gas or a nitriding gas
Implementation Method 4
the process chamber is kept at a pressure lower than a vapor pressure of a byproduct corresponding to a surface temperature of the substrate during the exposure of the substrate to the catalyst and modification gas, the byproduct being produced by a reaction between the catalyst and the source gas and starting to sublimate at the vapor pressure
Data Source
AI summary
A thin film can be formed on a substrate at a low temperature with a practicable film-forming rate. There is provided a semiconductor device manufacturing method for forming an oxide or nitride film on a substrate. The method comprises: exposing the substrate to a source gas; exposing the substrate to a modification gas comprising an oxidizing gas or a nitriding gas, wherein an atom has electronegativity different from that of another atom in molecules of the oxidizing gas or the nitriding gas; and exposing the substrate to a catalyst. The catalyst has acid dissociation constant pKa in a range from 5 to 7, but a pyridine is not used as the catalyst.