Semiconductor Film Etching with a Protective Second Film Layer
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in improving the surface roughness of films, particularly during the formation of metal-containing films on substrates, which can lead to issues such as film peeling and increased particle generation.
Innovation Solution
A technique involving the formation of a second film with a lower etching rate than a first film, followed by supplying a first gas to remove a portion of the first film, thereby controlling the surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a crystalline layer separation film is formed on the surface of a metal-containing film or abnormal growth nuclei are removed, then the film structure is improved, but the surface roughness deteriorates
Solution Approach 1:
A second film with lower etching rate is formed on the first film before the etching process. This preliminary action prepares the surface to withstand subsequent etching while maintaining smoothness, preventing the roughness that would normally occur during the removal of abnormal growth nuclei
Solution Approach 2:
The second film acts as an intermediary protective layer between the etching gas and the first film. It mediates the etching process by being etched preferentially or at a slower rate, thereby protecting the underlying first film from direct aggressive etching that would cause surface roughness
2Manufacturing precision
If the surface roughness of films is improved, then film quality is enhanced, but the time required for cleaning and processing increases
Solution Approach 1:
The second film is formed in advance before the etching process, serving as a protective barrier that maintains surface smoothness during subsequent processing steps, thereby reducing the need for additional cleaning time while preserving film quality
Solution Approach 2:
The etching rate parameter is controlled by selecting a second film material with a lower etching rate than the first film. This parameter change allows the etching process to proceed without excessively roughening the surface, maintaining film quality while managing processing time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the surface roughness of films, reduces film peeling, and minimizes particle generation, thereby improving productivity by reducing the time required for cleaning and maintaining film quality.
Implementation Method 1
a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied
Data Source
AI summary
A technique includes: (a) forming a second film, whose etching rate is a second etching rate that is equal to or lower than a first etching rate of a first film when a first gas capable of removing at least a portion of the first film is supplied, on the first film; and (b) supplying the first gas to the first film.