Semiconductor Film Coating for Large-Area Low-Temperature Solar Cells
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Solution Overview
Problem
Current solar cell production methods, such as vacuum processes and printing methods, face challenges in achieving large-area solar cells with high efficiency and low cost, due to limited area constraints, poor material utilization, high power consumption, and the need for high-temperature processes, which restrict substrate options and increase environmental impact.
Innovation Solution
A semiconductor film is formed using an application liquid comprising inorganic semiconductor particles and organic compounds with high relative permittivity, allowing for the production of large-area solar cells at low temperatures and reduced costs, with a semiconductor element that includes a junction interface layer for enhanced power generation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vacuum processes are used for solar cell production, then film quality can be maintained, but the area is limited and power consumption is high
Solution Approach 1:
The patent replaces vacuum-based physical vapor deposition with a chemical solution-based deposition method. The semiconductor film is formed by applying a solution containing semiconductor particles and organic compounds, followed by low-temperature heating to remove the organic component. This substitution eliminates the need for vacuum equipment, enabling large-area production while maintaining film quality through controlled chemical processes.
2Manufacturing precision
If vacuum processes are used for solar cell production, then film quality can be maintained, but power consumption becomes large
Solution Approach 1:
The patent replaces energy-intensive vacuum processes with a low-temperature thermal processing method. The semiconductor film is formed by heating the applied solution at temperatures below 100°C to evaporate the organic solvent and sinter the semiconductor particles. This dramatically reduces power consumption while maintaining film quality through controlled chemical deposition and low-temperature sintering.
3Manufacturing precision
If high temperature process is used, then semiconductor film can be formed, but usable substrates are limited
Solution Approach 1:
The patent fundamentally changes the processing temperature parameter from high temperature (required in conventional methods) to low temperature (below 100°C). This is achieved by using a solution-based deposition method where the organic compounds serve as both the deposition medium and the temperature limiter. The low processing temperature enables the use of flexible substrates, plastic films, and other temperature-sensitive materials that cannot be used in conventional high-temperature processes.
4Area of stationary object
If printing method is used, then large area can be achieved, but reduction step and selenization step are necessary increasing costs
Solution Approach 1:
The patent merges multiple process steps into a single deposition and heating operation. The solution contains all necessary components (semiconductor particles, organic compounds, and binding agents) that are applied in one step and converted to the final film structure through a single low-temperature heating process. This eliminates the need for separate reduction and selenization steps required in conventional printing methods, simplifying the overall process while maintaining large-area capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of large-area semiconductor films and solar cells with improved power generation efficiency and reduced costs, using a low-temperature process that minimizes environmental impact and expands substrate options.
Implementation Method 1
an organic compound having a relative permittivity of 10 or more
Data Source
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AI summary
The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.