Semiconductor Thin Film Step Coverage via Halogen Surface Treatment
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Solution Overview
Problem
The existing processes for forming thin films on semiconductor substrates often result in poor step coverage and discontinuous films, especially when forming films with thicknesses in the range of 5 Å to 100 Å or in high-aspect-ratio trenches, leading to deteriorated electrical characteristics and increased production costs due to high incubation times and productivity issues.
Innovation Solution
A method involving a substrate processing apparatus that treats the insulating film surface with a first precursor containing a predetermined element and a halogen group, followed by a cycle of supplying a second precursor and a third precursor to form a thin film, improving step coverage and productivity by forming a continuous seed layer and modifying the film layer to reduce impurities and enhance film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin film is formed on a substrate with an insulating film using conventional methods, then the film formation process is simple, but step coverage decreases and discontinuous films with pinholes are formed
Solution Approach 1:
The film formation process is divided into multiple sequential steps: surface treatment with a first precursor, followed by cyclic alternating supply of second precursor (containing predetermined element and halogen group) and third precursor. This segmentation allows each step to perform a specific function - the first precursor treats the insulating film surface to improve adhesion, while the cyclic process builds up a continuous thin film layer by layer, ensuring complete coverage of high-aspect-ratio trenches without forming pinholes
Solution Approach 2:
The insulating film surface is treated in advance with a first precursor containing a predetermined element and halogen group before the main thin film formation. This preliminary action modifies the surface properties of the insulating film, creating a favorable surface for subsequent film deposition and preventing discontinuous film formation, thereby improving step coverage in high-aspect-ratio trenches
2Manufacturing precision
If the film thickness is reduced to the thin film range of 5 Å to 100 Å, then device characteristics are improved, but step coverage decreases and discontinuous films are formed
Solution Approach 1:
The thin film is formed through periodic cyclic processes where the second precursor (containing predetermined element and halogen group) and third precursor are alternately supplied a predetermined number of times. This periodic action enables precise control of film thickness within the 5 Å to 100 Å range while ensuring continuous film formation by building up the film layer by layer through repeated cycles, preventing pinhole formation and maintaining film reliability
Solution Approach 2:
The process utilizes parameter changes by controlling the number of cycles, supply timing, and precursor types to achieve the desired thin film thickness range. By adjusting these parameters, the process maintains film continuity and prevents pinholes even at thicknesses of 5 Å to 100 Å, ensuring both precision and reliability
3Manufacturing precision
If an insulating film is formed on the substrate surface, then device structure is created, but incubation time increases and productivity decreases
Solution Approach 1:
The insulating film surface is treated in advance with a first precursor containing a predetermined element and halogen group to create a favorable surface for immediate film deposition. This preliminary action eliminates the incubation period by preparing the surface beforehand, allowing the thin film formation to start immediately when the second precursor is supplied, thereby improving productivity without compromising film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-quality thin films with improved step coverage and uniformity, reducing incubation time and production costs, while maintaining film quality even at low temperatures, and providing a dense film with high wet-etching resistance.
Implementation Method 1
treating a surface of an insulating film formed on a substrate by supplying a first precursor containing a predetermined element and a halogen group to the substrate
Implementation Method 2
forming a thin film containing the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor containing the predetermined element and a halogen group to the substrate; and supplying a third precursor to the substrate
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.