Semiconductor Film Filling Using Front-Back Substrate Temperature Gradient
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in filling recesses on substrates with films, as gases used in film formation tend to reach the peripheral areas more easily than the bottom of recesses, leading to incomplete layer formation.
Innovation Solution
A substrate processing apparatus generates a temperature difference between the front and back surfaces of the substrate during film formation, promoting gas flow from the peripheral areas to the recess bottom, enhancing film filling characteristics by controlling the temperature with heaters and lamps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied to form a film on substrate, then film formation occurs on peripheral areas, but gas难以 reach the bottom of recesses leading to incomplete film formation
Solution Approach 1:
The patent changes the temperature parameter of the substrate by generating a temperature difference between the front surface (higher temperature) and back surface (lower temperature). This temperature gradient causes gas to flow from the peripheral areas toward the recess bottom, improving gas distribution and film formation completeness in previously difficult-to-reach areas.
Solution Approach 2:
The patent introduces a temperature dimension to the substrate, creating a three-dimensional temperature distribution (front surface hotter than back surface). This additional dimensional control enables gas flow patterns that were not achievable with uniform temperature, allowing gas to reach recess bottoms effectively.
2Manufacturing precision
If temperature difference is generated between front and back surfaces, then gas flow to recess bottom is improved, but energy consumption increases
Solution Approach 1:
The patent applies local quality by heating only specific regions of the substrate (front surface) rather than uniformly heating the entire substrate. This localized heating approach creates the necessary temperature gradient for improved gas flow while minimizing overall energy consumption compared to uniform high-temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the filling characteristics of films within recesses by ensuring gases reach and deposit material uniformly across the substrate surface, including the recess bottoms, leading to more complete and uniform film formation.
Implementation Method 1
generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a)
Implementation Method 2
a temperature on the front surface of the substrate is at least temporarily higher than a temperature on the back surface of the substrate at a timing of supplying the gas to the substrate
Data Source
AI summary
Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).