Semiconductor Fin Structures With Diffusion Breaks For Short Channel Control
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Solution Overview
Problem
As semiconductor devices are downscaled, they face challenges such as the short channel effect, which degrades operating characteristics and increases power consumption, necessitating improved methods for higher integration density and reliability.
Innovation Solution
The semiconductor device incorporates a unique layout with first and second fin structures, diffusion break structures, and gate electrodes arranged on a substrate with varying fin configurations and power rails to enhance performance and reliability, including the use of single and double diffusion break films to control threshold voltage distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFETs are downscaled to increase integration density, then the number of devices per unit area increases, but short channel effect degrades operating characteristics
Solution Approach 1:
The device is divided into multiple fins (first fin, second fin, third fin) within each transistor structure. This segmentation allows the gate to control multiple channel regions simultaneously, improving gate control effectiveness and reducing short channel effects while maintaining compact footprint for high integration density
Solution Approach 2:
The invention transitions from planar 2D channel structure to 3D vertical fin structures extending in the third direction. Multiple fins are arranged to extend vertically, creating a three-dimensional active region that enhances gate control over the channel while maintaining small planar footprint
2Area of moving object
If MOSFETs are downscaled to reduce device size, then space utilization improves, but power consumption increases
Solution Approach 1:
The transistor channel is segmented into multiple fins with diffusion break structures positioned between them. This segmentation creates isolated channel regions that reduce leakage current while maintaining effective gate control, thereby reducing power consumption in scaled devices
Solution Approach 2:
Diffusion break structures are introduced as intermediary elements between adjacent fins. These structures act as barriers that prevent carrier diffusion and reduce off-state leakage current, thereby reducing power consumption while allowing closer fin spacing for compact device size
3Reliability
If diffusion break structures are added between fins to control threshold voltage, then threshold voltage distribution stabilizes, but device complexity increases
Solution Approach 1:
Diffusion break structures are selectively positioned between specific fins (first and second fins, second and third fins) rather than uniformly throughout the device. This local application optimizes threshold voltage control in critical regions while minimizing overall structural complexity
Solution Approach 2:
The diffusion break structures are integrated into the existing fin and gate structure during the fabrication process. The break structures are formed as part of the diffusion process that creates the fins themselves, merging multiple functions into a unified structure rather than adding separate components
Data Source
AI summary
A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.