Semiconductor Fin Structure Protection Layer for Plug Alignment
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in forming metal gates and contact plugs due to position shifts and electrical performance issues, particularly as critical dimensions shrink, leading to penetration of metal gates and compromised device performance.
Innovation Solution
A method involving the formation of a semiconductor device with a fin-shaped structure, epitaxial layer, interlayer dielectric, and a protection layer, where a germanium cap layer and protection layer are sequentially formed on the sidewalls of openings to prevent exposure and damage during etching processes, ensuring accurate plug formation and improved electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current photoresist and lithography techniques are used to form contact plugs and metal gates, then the manufacturing process can be maintained with existing equipment, but position shifts occur causing contact plugs to penetrate the metal gate and electrical performance deteriorates
Solution Approach 1:
A protection layer is formed on the sidewalls of the opening before filling the contact plug, creating a preliminary protective structure that prevents position shifts and penetration during subsequent processing steps. This preliminary action ensures accurate alignment between the contact plug and metal gate, resolving the positioning accuracy and electrical performance contradiction.
Solution Approach 2:
The protection layer acts as an intermediary element between the opening sidewalls and the contact plug material. This intermediary structure prevents direct contact and potential misalignment, ensuring precise positioning while maintaining electrical performance by preventing unwanted penetration into the metal gate structure.
2Productivity
If the critical dimension is continuously shrunk to achieve miniaturization, then device integration and operating speed are improved, but the existing manufacturing techniques become inadequate and position control becomes difficult
Solution Approach 1:
The protection layer is formed in advance on the sidewalls before contact plug deposition, creating a predefined structure that guides precise material placement. This preliminary structuring enables accurate position control even at reduced critical dimensions, allowing continued miniaturization while maintaining manufacturing precision through the protective framework.
3Reliability
If a protection layer is formed on sidewalls of openings with proper thickness, then sidewall protection and electrical performance are improved, but the formation of subsequent elements may be affected
Solution Approach 1:
The protection layer thickness is precisely controlled within an optimal range (10-15 nanometers) to balance protection and compatibility. This parameter optimization ensures sufficient sidewall protection and electrical performance while maintaining compatibility with subsequent processing steps, preventing interference with element formation through careful dimensional control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the electrical performance of semiconductor devices by protecting the sidewalls and preventing damage during etching, maintaining structural integrity and enhancing the formation of plug structures without affecting subsequent element formation.
Implementation Method 1
an epitaxial layer is formed in the fin shaped structure, adjacent to the gate structure
Implementation Method 2
a protection layer is formed on sidewalls of the first opening
Data Source
AI summary
A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer, an interlayer dielectric layer, a first plug and a protection layer. The fin shaped structure is disposed on a substrate, and the gate structure is across the fin shaped structure. The epitaxial layer is disposed in the fin shaped structure, adjacent to the gate structure. The interlayer dielectric layer covers the substrate and the fin shaped structure. The first plug is formed in the interlayer dielectric layer, wherein the first plug is electrically connected to the epitaxial layer. The protection layer is disposed between the first plug and the gate structure.