Semiconductor Flange Package Reducing Parasitic Capacitance
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Solution Overview
Problem
The packaging of semiconductor die often leads to increased parasitic capacitances, which decrease the frequency of operation of semiconductor components due to varying packaging structures, and there is a need for improved thermal management and electrical signal transmission while protecting the semiconductor die from environmental and physical stresses.
Innovation Solution
A thermally and electrically conductive flange with a coefficient of thermal expansion matching that of silicon is used, featuring a slot, channel, and mold lock feature, coupled with a dielectric material to form a leadframe assembly that secures and isolates semiconductor components, enhancing thermal conductivity and reducing parasitic capacitances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor die are placed in a package to protect them from environmental and physical stresses, then reliability is improved, but parasitic capacitances increase which decreases operational frequency
Solution Approach 1:
The package structure is segmented into distinct functional regions: a flange portion for mechanical support and thermal management, a leadframe portion for electrical connections, and a mold compound portion for environmental protection. This segmentation allows each component to be optimized independently, reducing overall parasitic capacitance while maintaining protection.
Solution Approach 2:
A dielectric material is introduced as an intermediary between the semiconductor die and the package structure. This dielectric layer provides electrical isolation that reduces parasitic capacitances between the die and package components, while still allowing thermal conduction and mechanical support.
2Reliability
If packaging structures are designed to transmit electrical signals, then electrical conductivity is improved, but parasitic capacitances increase which reduces frequency of operation
Solution Approach 1:
A dielectric material is introduced as an intermediary between the semiconductor die and the package structure. This dielectric layer provides electrical isolation that reduces parasitic capacitances between the die and package components, while still allowing thermal conduction and mechanical support.
Solution Approach 2:
The leadframe is designed with thin film structures that provide electrical connection paths with minimized capacitance. The thin film geometry reduces the overlapping area between conductive elements, thereby reducing parasitic capacitance while maintaining signal transmission capability.
3Temperature
If packaging structures are designed for thermal management, then heat removal is improved, but device complexity increases
Solution Approach 1:
The flange is designed to combine multiple functions: mechanical support for the semiconductor die, thermal conduction path for heat removal, and structural anchor for the leadframe. By merging these functions into a single integrated component, thermal management is improved without proportionally increasing device complexity.
Solution Approach 2:
The flange component serves multiple purposes simultaneously: it provides mechanical support, acts as a thermal sink for heat removal, and serves as a mounting structure for the leadframe. This multi-functionality achieves effective thermal management while minimizing the number of separate components required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively maintains the semiconductor die at a predetermined temperature, increases breakdown voltage, and enhances operational frequency by reducing parasitic capacitances and improving thermal management and electrical isolation.
Implementation Method 1
A thermally and electrically conductive flange with a coefficient of thermal expansion matching that of silicon is used
Implementation Method 2
A thermally and electrically conductive flange with a coefficient of thermal expansion matching that of silicon is used
Implementation Method 3
A thermally and electrically conductive flange with a coefficient of thermal expansion matching that of silicon is used
Data Source
AI summary
In accordance with one or more embodiments, a flange package comprises a flange and an interposer having two or more fingers disposed in an interposer trench. The flange has a mold lock formed about a periphery of the interposer trench. A dielectric ring comprising a dielectric material is formed in the interposer trench, and in and around the periphery of the mold lock. A semiconductor die is disposed within the dielectric ring having gate pads and source pads formed on a first side, and having drain pads disposed on a second side of the die. The gate pads are coupled to the interposer and the source pads are coupled to the flange. A gate lead is coupled to the interposer and a drain lead is coupled to the drain pads. Other embodiments are disclosed.