Semiconductor Device Flat Surface Electrode via Embedded Electrode
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Solution Overview
Problem
In semiconductor devices with trench-type gate electrodes, the protruding interlayer insulating film creates a step on the surface electrode, leading to cracks under temperature changes, which can deteriorate the device's characteristics by causing cracks to propagate along the surface or thickness direction, potentially reaching the semiconductor substrate.
Innovation Solution
A semiconductor device design featuring a trench electrode, an interlayer insulating film, a Schottky electrode, and an embedded electrode, where the embedded electrode is grown to cover the interlayer insulating film and Schottky electrode, and then etched to remain in a concave portion between them, allowing the surface electrode to be flat and cover the entire structure, preventing crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the interlayer insulating film protrudes from the surface of the semiconductor substrate, then the surface electrode takes a shape that bulges convexly, but a step is formed on the surface of the surface electrode which causes cracks under temperature changes
Solution Approach 1:
An embedded electrode is introduced as an intermediary structure between the interlayer insulating film and the surface electrode. This embedded electrode fills the concave portion formed by the protruding interlayer insulating film, providing a transition structure that allows the surface electrode to be deposited continuously without forming steps, thereby preventing crack formation while maintaining proper coverage.
2Reliability
If the surface electrode is made flat to prevent cracks, then reliability improves, but the interlayer insulating film protrusion must be compensated
Solution Approach 1:
The embedded electrode is nested within the concave portion formed by the protruding interlayer insulating film. This nesting approach allows the embedded electrode to fill the void space created by the insulating film protrusion, providing a flat surface for the surface electrode while integrating the compensation structure within the existing device geometry rather than adding external complexity.
3Manufacturing precision
If the embedded electrode is grown to cover the interlayer insulating film and Schottky electrode, then the surface electrode can be made flat, but the embedded electrode must be etched to remain in the concave portion
Solution Approach 1:
The embedded electrode is grown in advance to cover the interlayer insulating film and Schottky electrode, creating a preliminary structure that ensures complete coverage. Subsequent etching then removes the excess embedded electrode material, leaving only the portion needed to fill the concave portion. This preliminary action approach ensures proper surface flatness while using standard semiconductor fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables the manufacturing of a semiconductor device with a flat surface electrode, reducing the risk of crack formation and maintaining device characteristics by ensuring the embedded electrode remains in a narrow concave portion, making the surface electrode flat and stable.
Implementation Method 1
by growing the embedded electrode so that the embedded electrode covers the interlayer insulating film, the Schottky electrode, and the concave portion
Implementation Method 2
The Schottky electrode is provided on the surface of the semiconductor substrate, provided in a position separated from the interlayer insulating film, and in Schottky contact with the semiconductor substrate
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate including a trench provided in a surface of the semiconductor substrate; a trench electrode provided in the trench; an interlayer insulating film covering a surface of the trench electrode and protruding from the surface of the semiconductor substrate; a Schottky electrode provided on the surface of the semiconductor substrate, provided in a position separated from the interlayer insulating film, and being in Schottky contact with the semiconductor substrate; an embedded electrode provided in a concave portion between the interlayer insulating film and the Schottky electrode and made of a metal different from a metal of the Schottky electrode; and a surface electrode covering the interlayer insulating film, the embedded electrode, and the Schottky electrode.