Semiconductor Device Flat Plate Terminals Screw Clamping Thickness

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Solution Overview

Problem

Conventional semiconductor devices with screw clamping for large current applications have a thickness issue due to the need for nuts in the sealing resin, which increases the device thickness.

Innovation Solution

The semiconductor device design includes flat plate-shaped terminals with female thread portions exposed outside the sealing resin, allowing for screw clamping without embedding nuts within the resin, thereby reducing the device thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If nuts for screw clamping are embedded in the sealing resin, then connection by screw clamping to external terminals is enabled, but the thickness of the semiconductor device increases

Engineering Contradiction:
Improvescrew clamping connection capabilityVSAvoiddevice thickness
Core Design Contradiction:
Ease of operationVSLength of stationary object

Solution Approach 1:

The patent extracts the nut component from the sealing resin and relocates it to the external terminal portion. The terminal structure is divided into an inner terminal portion embedded in the sealing resin and an outer terminal portion extending outward with an integrated female thread portion. This extraction eliminates the need to embed nuts in the sealing resin, thereby reducing device thickness while maintaining screw clamping functionality.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the terminal and nut functions into a single integrated structure. The outer terminal portion includes an integrated female thread portion that combines the functions of the original terminal and the separate nut component. This integration eliminates the need for separate nuts embedded in the sealing resin, reducing device thickness while preserving screw clamping capability.

Inventive Principle:
Principle #5Merging (Combining)

2Length of stationary object

If the device thickness is reduced by not embedding nuts in sealing resin, then heat dissipation and wiring resistance are improved, but the capability for screw clamping connection is lost

Engineering Contradiction:
Improvedevice thicknessVSAvoidscrew clamping connection capability
Core Design Contradiction:
Length of stationary objectVSEase of operation

Solution Approach 1:

The patent transitions the threading function from a three-dimensional embedded nut structure within the sealing resin to a two-dimensional integrated female thread portion on the surface of the outer terminal portion. This dimensional change allows screw clamping connections to be made at the external surface level, eliminating the need for thick embedded nut structures while maintaining connection capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20230011041A1Semiconductor device
Publication Date: 2023.01.12 SHINDENGEN ELECTRIC MANUFACTURING CO LTD
  • US20230011041A1 patent drawing
  • US20230011041A1 patent drawing
  • US20230011041A1 patent drawing

AI summary

A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal having a flat plate-shape that is connected to a first electrode of the semiconductor element; a second terminal having a flat plate-shape that is connected to the first conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, and the semiconductor element. Each of the first terminal and the second terminal includes: an inner terminal portion disposed inside the sealing resin; and an outer terminal portion disposed in a state of being exposed to an exterior of the sealing resin, and a female thread portion is provided in the outer terminal portion of each of the first terminal and the second terminal.