Semiconductor Surface Flattening via Chemical Catalyst Dissolution
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Solution Overview
Problem
The CMP method for semiconductor manufacturing often causes mechanical damage due to abrasive grains, leading to polishing damage on the surfaces of workpieces during the flattening process.
Innovation Solution
A method involving a first oxidizing catalyst and a second basic catalyst, along with a treatment liquid, to form and chemically dissolve an oxide film on the surface of the workpiece, thereby flattening the surface without mechanical polishing, using a semiconductor manufacturing apparatus with specific holders for catalysts and a treatment liquid supply system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If CMP method with abrasive grains is used to flatten the workpiece surface, then surface flattening is achieved, but mechanical damage and polishing damage occur on the workpiece surface
Solution Approach 1:
The patent replaces the mechanical polishing action of abrasive grains with a chemical dissolution mechanism. A treatment liquid containing chelating agents and surfactants chemically dissolves凸起 portions of the metal film surface, achieving flattening without mechanical contact that causes damage. This substitutes mechanical energy with chemical energy for the flattening process.
Solution Approach 2:
The patent changes the fundamental mechanism parameter from mechanical removal to chemical dissolution. By adjusting the composition of the treatment liquid (adding chelating agents like EDTA and surfactants), the chemical reactivity and dissolution rate are optimized to achieve selective removal of凸起 portions while preserving surface integrity.
2Object-affected harmful factors
If chemical dissolution method is used to flatten the workpiece surface, then polishing damage is suppressed, but treatment speed may be reduced compared to mechanical polishing
Solution Approach 1:
The treatment liquid is formulated as a composite solution containing multiple functional components: chelating agents (EDTA, ammonium fluoride) for chemical dissolution, surfactants (Tween 80, Triton X-100) for surface activation and uniform distribution, and oxidizing agents (hydrogen peroxide) for enhanced reactivity. This composite formulation achieves both gentle chemical action and adequate treatment speed.
Solution Approach 2:
The patent incorporates strong oxidizing agents such as hydrogen peroxide into the treatment liquid to accelerate the chemical dissolution process. The oxidizing environment enhances the reactivity of the chelating agents, increasing the dissolution rate of凸起 portions while maintaining the gentle chemical mechanism that avoids mechanical damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses polishing damage by chemically dissolving convex portions of the workpiece, allowing for rapid surface flattening while maintaining surface integrity, and can enhance treatment speed with the use of an oxidizing agent in the treatment liquid.
Implementation Method 1
bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece
Implementation Method 2
bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid
Data Source
AI summary
In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.