Semiconductor Floating Conductive Pattern for Bridge Failure Prevention
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Solution Overview
Problem
The operational reliability of semiconductor devices is compromised due to bridge failures caused by contact plugs passing through conductive patterns in pad regions, leading to electrical coupling issues between conductive patterns at different levels.
Innovation Solution
The semiconductor device incorporates a floating conductive pattern positioned below the pad patterns, which are contacted by plugs, preventing direct contact with lower conductive patterns and reducing the risk of bridge failures by using a stepped structure with thicker pad patterns and separation insulating layers to isolate the floating conductive pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact plugs are used to couple pad regions of conductive patterns, then electrical connection between conductive patterns is achieved, but bridge failure occurs when contact plugs pass through conductive patterns causing unintended electrical coupling
Solution Approach 1:
A floating conductive pattern is introduced as an intermediary layer between the contact plug and the lower conductive pattern. This floating conductive pattern acts as a mediator that the contact plug must pass through, but which does not create unintended electrical coupling because it is electrically isolated (floating). The contact plug penetrates the floating conductive pattern without establishing a conductive path to lower conductive patterns, thus preventing bridge failure while maintaining the necessary electrical connections.
Solution Approach 2:
The structure is segmented into multiple conductive pattern layers with distinct functions. The floating conductive pattern is segmented as a separate, electrically isolated layer that divides the path of the contact plug. This segmentation allows the contact plug to pass through without creating harmful electrical coupling, as the floating conductive pattern is disconnected from the lower conductive patterns by insulating layers.
2Productivity
If conductive patterns are stacked in three dimensions for high integration, then memory cell density is improved, but the complexity of electrical coupling and risk of bridge failure increases
Solution Approach 1:
The solution moves the problem from a two-dimensional planar coupling issue to a three-dimensional vertical stacking solution. By introducing the floating conductive pattern as an intermediate vertical layer, the patent resolves the complexity of electrical coupling in the vertical dimension. The contact plug traverses the vertical stack and connects pad regions at different levels without creating harmful lateral coupling, as the floating conductive pattern is isolated by insulating layers in the vertical dimension.
Data Source
AI summary
Provided herein is a semiconductor device. The semiconductor device includes: a lower conductive pattern; a lower memory string conductive pattern disposed over the lower conductive pattern; a stack of upper memory string conductive patterns, wherein the stack is disposed over the lower memory string conductive pattern; a lower pad pattern extending from the lower memory string conductive pattern; upper pad patterns respectively extending from the upper memory string conductive patterns; a floating conductive pattern disposed under below the lower pad pattern, the floating conductive pattern overlapping the lower pad pattern; and a contact plug coming into contact with the lower pad pattern and overlapping the floating conductive pattern.