Semiconductor Micro Wiring via Fly Cutting Copper Paste
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Solution Overview
Problem
The existing methods for forming micro wiring in semiconductor devices are costly due to the need for processes like seed layer formation, resist application, and chemical mechanical polish (CMP), which also lead to issues like dishing and increased manufacturing costs.
Innovation Solution
A method involving the formation of an insulating layer with trenches, filling these trenches with a copper layer using a copper paste, and removing the excess copper layer using a fly cutting method, eliminating the need for CMP and reducing manufacturing costs while improving yield and surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional processes (sputtering, electroplating, CMP) are used to form micro wiring, then wiring formation is achieved, but manufacturing cost increases and dishing occurs
Solution Approach 1:
The invention extracts and removes the CMP process from the conventional wiring formation sequence, replacing it with a fly cutting method that eliminates dishing while reducing manufacturing complexity and cost
Solution Approach 2:
The invention replaces the chemical-mechanical polishing (CMP) process with a mechanical fly cutting method, substituting a complex chemical-mechanical system with a simpler mechanical cutting approach that achieves flat surfaces without dishing
2Manufacturing precision
If CMP process is used for wiring formation, then surface flatness is achieved, but dishing occurs and manufacturing cost increases
Solution Approach 1:
The invention replaces the CMP mechanical-chemical system with a pure mechanical fly cutting method, eliminating the dishing effect inherent in CMP while maintaining surface flatness through precise mechanical cutting control
Solution Approach 2:
The invention extracts the harmful dishing effect from the surface treatment process by removing the CMP step entirely and replacing it with a cutting-based approach that inherently prevents dishing
3Manufacturing precision
If multiple conventional processes are used for micro wiring, then wiring quality is improved, but manufacturing complexity and time increase
Solution Approach 1:
The invention merges multiple separate processes (seed layer formation, electroplating, CMP) into a more integrated workflow where copper paste is applied directly and cured, reducing the total number of discrete manufacturing steps and improving productivity
Solution Approach 2:
The invention extracts and removes several time-consuming conventional processes (sputtering, electroplating, CMP) from the manufacturing sequence, retaining only the essential copper deposition and curing steps to improve manufacturing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-density wiring formation with improved yield and reduced costs, enhancing chip-to-chip transmission efficiency and preventing peeling of wiring layers.
Implementation Method 1
a sintering step of heating the copper paste to sinter
Implementation Method 2
a removing step of removing the copper layer on the insulating layer by a fly cutting method
Data Source
AI summary
To provide a manufacturing method capable of manufacturing a high density semiconductor device excellent in transmission between chips at a favorable yield and at low cost. A method for manufacturing a semiconductor device includes an insulating layer forming step of forming an insulating layer 3 having a trench 4 above a substrate 1, a copper layer forming step of forming a copper layer 5a on the insulating layer 3 so as to fill the trench 4, and a removing step of removing the copper layer 5a on the insulating layer 3 by a fly cutting method so as to retain a copper layer part in the trench 4.