Semiconductor Frame for Thermal Dissipation and Warpage Control
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Solution Overview
Problem
Semiconductor packages face challenges with heat dissipation and warpage due to thermal expansion coefficient differences between silicon and metal, leading to stress and potential fractures, which affect the reliability and integrity of integrated circuit structures.
Innovation Solution
A semiconductor device with conductive bumps is developed, featuring a frame made of non-conductive materials like silicon or silicon oxide that surrounds the bumps, providing high thermal dissipation and reduced warpage by forming a boundary for the bumps through lithographic and etching processes, and using an adhesive layer to connect the device to an object with conductive pads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional wire bonding is used for signal joints, then low cost and process flexibility are achieved, but package size increases and thermal performance deteriorates
Solution Approach 1:
The patent replaces the mechanical wire bonding system with a flip chip bonding system that uses conductive bumps for electrical and mechanical connection. This substitution eliminates the need for wire loops and bonding wires, achieving smaller package size and improved thermal performance while maintaining manufacturing feasibility through standardized bumping processes
2Volume of moving object
If flip chip bonding is used to reduce package size, then thermal performance improves, but manufacturing complexity increases
Solution Approach 1:
The patent segments the bonding process into distinct stages: forming conductive bumps on the die, positioning the die on the substrate, and reflow bonding. This segmentation simplifies the overall manufacturing complexity by breaking down the flip chip process into manageable, standardized steps that can be controlled independently
Solution Approach 2:
The patent utilizes parameter changes in the reflow process, specifically controlling temperature and time profiles during the reflow stage to achieve reliable bonding. By optimizing these parameters, the manufacturing process becomes more predictable and less complex, enabling widespread adoption of flip chip technology
3Productivity
If metal interconnects are used to achieve high I/O density, then electrical performance improves, but thermal expansion stress increases
Solution Approach 1:
The patent employs composite material structures in the interconnect system, combining metal conductive bumps with underlying metal traces and pad structures. This composite approach allows optimization of each layer for its specific function: metal provides electrical conductivity and mechanical strength, while the multi-layer structure helps manage thermal expansion differences between the silicon die and organic substrate
Solution Approach 2:
The patent applies local quality by using conductive bumps only at the I/O locations where electrical connection is needed, rather than covering the entire die surface. This localized approach maintains high I/O density while reducing the overall thermal mass and stress accumulation compared to full-metal-coverage approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high thermal dissipation, minimizes bumping stress, and prevents die cracks by using a frame with higher thermal conductivity and stiffness than conventional resin, enabling a semiconductor package with fine-pitch, high input/output density, and improved reliability.
Implementation Method 1
the frame has a high thermal dissipation property
Implementation Method 2
an adhesive layer interposed between the semiconductor device and the object
Data Source
AI summary
One aspect of the present disclosure provides a semiconductor device. In some embodiments, the semiconductor device includes an integrated circuit die, at least one conductive terminal disposed on the integrated circuit die, a frame positioned on the integrated circuit die, wherein the frame substantially exposes the at least one conductive terminal, and at least one conductive bump positioned in the frame, wherein the at least one conductive bump electrically connects the at least one conductive terminal.