Semiconductor Device Frictional Slide Bonding Yield
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Solution Overview
Problem
The development of semiconductor devices with high current density, low loss, and high heat dissipation capabilities is challenging, particularly due to the low yield and potential for unintended conduction failures in power semiconductor chips, especially when using SiC or nitride semiconductors, and the integration of multiple semiconductor chips on a single base material increases the risk of defective chips affecting the entire device.
Innovation Solution
The semiconductor device design features multiple semiconductor chips mounted on separate base materials, with frictional slide bonding between the base materials and the use of solder materials with varying melting points to ensure reliable bonding and prevent unintended conduction failures, allowing for pre-checking of chip electrical characteristics and selective assembly to improve yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor chips are integrated on a single base material, then device functionality is enhanced, but the risk of defective chips affecting the entire device increases and yield decreases
Solution Approach 1:
The patent divides the semiconductor device into multiple independent modules, each comprising a separate base material and semiconductor chip. This segmentation allows defective modules to be isolated and removed without affecting other functional modules, thereby maintaining overall device functionality while improving yield through selective assembly of only good modules.
2Reliability
If frictional slide bonding is used to bond base materials, then bonding reliability is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent performs preliminary electrical characteristic checks on semiconductor chips before bonding them to base materials. This preliminary action allows for the identification and exclusion of defective chips prior to the frictional slide bonding process, ensuring that only good chips are bonded, thereby improving bonding reliability without requiring complex bonding process modifications.
3Reliability
If solder materials with varying melting points are used, then bonding selectivity and reliability are improved, but manufacturing process complexity increases
Solution Approach 1:
The patent utilizes parameter changes in solder materials, specifically varying melting points, to achieve selective bonding. By choosing solder materials with different melting points for different bonding stages, the process enables controlled and selective bonding operations. This parameter-based differentiation improves bonding reliability and selectivity while managing manufacturing complexity through systematic material selection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the yield of semiconductor devices by enabling the identification and exclusion of defective chips and reduces the risk of unintended conduction failures, resulting in a semiconductor device with improved reliability and efficiency.
Implementation Method 1
frictional slide bonding between the base materials
Implementation Method 2
use of solder materials with varying melting points to ensure reliable bonding
Data Source
AI summary
A semiconductor device according to embodiments includes a first base material having a first side surface, a first semiconductor chip provided above the first base material, a first insulating plate provided between the first base material and the first semiconductor chip, a first metal plate provided between the first insulating plate and the first semiconductor chip, a first bonding material provided between the first metal plate and the first semiconductor chip, the first bonding material bonding the first metal plate and the first semiconductor chip, a second bonding material provided between the first base material and the first insulating material, the second bonding material bonding the first base material and the first insulating plate, a second base material having a second side surface, a second semiconductor chip provided above the second base material, a second insulating plate provided between the second base material and the second semiconductor chip, a second metal plate provided between the second insulating plate and the second semiconductor chip, a third bonding material provided between the second metal plate and the second semiconductor chip, the third bonding material bonding the second metal plate and the second semiconductor chip, a fourth bonding material provided between the second base material and the second insulating plate, the fourth bonding material bonding the second base material and the second insulating plate, and a first base bonding portion provided between the second side surface and the first side surface and bonded to the first side surface and the second side surface.