Semiconductor Fuse Design with Barrier Insulating Film
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Solution Overview
Problem
As semiconductor devices become more integrated, curved-type fuses used for repair purposes can lead to electrical shorts due to dispersed fuse fragments, reducing yield and causing malfunction.
Innovation Solution
The semiconductor device design includes runner lines under an interlayer insulating film, with fuse lines spaced at a wider interval, connected by conductive vias to prevent fragment dispersion and ensure proper cutting without damaging adjacent fuses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If curved-type fuses are used to reduce area, then area efficiency is improved, but fuse fragments disperse onto adjacent fuses causing electrical shorts
Solution Approach 1:
A barrier insulating film is introduced as an intermediary layer between adjacent curved-type fuses. This barrier film prevents fuse fragments dispersed during laser cutting from reaching adjacent fuses, thereby eliminating electrical shorts while maintaining the area efficiency benefits of curved fuse design.
Solution Approach 2:
The insulating film structure is segmented into different regions: a first insulating film layer and a second insulating film layer with a barrier film positioned between them. This segmentation allows the barrier film to specifically target and prevent fragment dispersion to adjacent fuses, while other regions maintain their original insulating functions.
2Productivity
If integration density is increased, then device capacity is improved, but etching depth increases causing manufacturing difficulty
Solution Approach 1:
The solution moves from a single-layer insulating film structure to a multi-layer insulating film structure with vertical segmentation. By adding the barrier film as a separate layer in the vertical dimension, the patent achieves better fragment containment without increasing lateral etching depth, thus resolving the manufacturing difficulty while maintaining high integration density.
3Area of moving object
If runner lines are spaced closely to save area, then area efficiency is improved, but fragment dispersion causes adjacent runner lines to short
Solution Approach 1:
The barrier insulating film serves as an intermediary protective layer between closely spaced runner lines. During fuse cutting operations, this barrier film intercepts and contains dispersed fragments, preventing them from bridging the gap between adjacent runner lines and causing electrical shorts, thereby enabling closer spacing while maintaining reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design prevents electrical shorts and maintains yield by ensuring accurate cutting of fuses without damaging adjacent lines, thus enhancing the reliability of semiconductor devices during the repair process.
Implementation Method 1
a laser beam is irradiated to a wire connected to the inferior cell in order to break the wire
Data Source
AI summary
A semiconductor device includes an interlayer insulating film on a substrate. A runner part includes a plurality of runner lines spaced apart from each other by a regular interval under the interlayer insulating film. A fuse cut part includes a plurality of fuse lines spaced apart from each other by a wider interval than the interval between the runner lines. A via in the interlayer insulating film connects a fuse line and a runner line to each other.