Semiconductor Fuse Box with Variable Pitch and Bypass Groups
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Solution Overview
Problem
As semiconductor memory devices integrate more densely, the increased number of fuses in conventional fuse boxes leads to reduced fuse pitch and width, causing damage during cutting and increased positioning time, which slows down the fuse cutting process and can result in adjacent fuse damage or bridging due to heat from nearby cutting.
Innovation Solution
A fuse structure with a first and second fuse pitch arrangement, where fuses are grouped into multiple cutting axes with a bypass configuration to reduce the number of cutting axes and prevent damage, allowing for efficient laser cutting without exposing all fuses to the laser simultaneously.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the number of fuses is increased to handle higher integration density, then the repair capability is improved, but the fuse pitch and width are reduced causing damage during cutting
Solution Approach 1:
The fuse box is divided into multiple fuse groups (first fuse group, second fuse group, third fuse group) with different configurations. The first and second fuse groups have larger fuse pitch for safe cutting, while the third fuse group provides additional repair capability. This segmentation allows the system to maintain both high repair capability and manufacturing precision.
2Manufacturing precision
If the fuse pitch is increased to prevent damage during cutting, then the manufacturing precision is improved, but the number of fuses that can be accommodated is reduced
Solution Approach 1:
The patent utilizes multiple dimensions and layers to arrange fuses. The first and second fuse groups are arranged in different spatial configurations with larger pitch, while the third fuse group adds another dimension of repair capability. This multi-dimensional arrangement allows accommodating more fuses overall while maintaining safe pitch dimensions for cutting operations.
3Ease of operation
If multiple cutting axes are used to facilitate fuse cutting, then the ease of operation is improved, but the positioning time and throughput are reduced
Solution Approach 1:
The fuse box is segmented into distinct fuse groups with different cutting axis requirements. The first fuse group has a first cutting axis, the second fuse group has a second cutting axis, and the third fuse group shares either cutting axis. This segmentation allows strategic use of cutting axes, reducing the total number needed while maintaining ease of operation for all fuse groups.
4Quantity of substance
If fuses are closely bundled to increase density, then the quantity of fuses is improved, but the heat from nearby cutting causes melting and bridging
Solution Approach 1:
Different regions of the fuse box are designed with different fuse pitch characteristics. The first and second fuse groups have larger fuse pitch in regions susceptible to heat damage, while the third fuse group can utilize smaller pitch in regions protected from adjacent cutting heat. This local quality variation allows high density where safe and appropriate pitch where heat protection is needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the risk of damage to adjacent fuses during cutting, improves processing throughput by minimizing the number of cutting axes, and prevents melting caused by heat from nearby cutting, thereby enhancing the efficiency of the fuse cutting process.
Implementation Method 1
Each fuse 15 is formed as a trace having a predetermined width 'W'. Adjacent fuses 15 are separated by fuse pitch P. The width W of fuse 15 is sized relative to the spot size of laser beam 17 so as to absorb the laser energy.
Implementation Method 2
The fuse 15 may be cut by irradiating it with a laser beam 17 having a predetermined diameter, (or spot size) 'S'. Thus, a normally conductive fuse 15 may be placed in a non-conductive state by cutting it with laser beam 17.
Implementation Method 3
the closely bundled fuses outside the fuse opening region are still susceptible to melting caused by the heat of near-by fuse cutting
Data Source
AI summary
A fuse box for a semiconductor device is disclosed and includes a first fuse group comprising a plurality of first fuses, arranged in a first direction and having a first cutting axis, each first fuse comprising a first portion having a first fuse pitch, a second portion having a second fuse pitch smaller than the first fuse pitch, and a third portion connecting the first and second portions, a second fuse group comprising a plurality of second fuses, arranged in the first direction and having a second cutting axis, each second fuse comprising a first portion having a first fuse pitch, a second portion having a second fuse pitch smaller than the first fuse pitch, and a third portion connecting the first portion and the second portion, and a third fuse group comprising a plurality of third fuses, wherein each third fuse has either the first cutting axis or the second cutting axis, comprises a first pattern arranged in the first direction and having a first fuse pitch, and a second pattern arranged in a second direction and having a second fuse pitch smaller than the first fuse pitch, and is arranged to bypass the first fuse or the second fuse.