Semiconductor Fuse Data Read via Internal Command Generation
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Solution Overview
Problem
Conventional semiconductor devices require additional latch circuits for storing manufacturing information, increasing size and cost due to the inability to program laser fuses after packaging and the time required to read data from nonvolatile memory circuits.
Innovation Solution
A semiconductor device that directly accesses nonvolatile memory through mode register commands to read fuse data, reducing the need for additional latch circuits by generating and using specific internal commands to enable a fuse driving signal for extended data retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate latch circuits are disposed for manufacturing information, then the manufacturing information can be stored and read, but the area of the semiconductor device increases and yield decreases
Solution Approach 1:
The patent merges the storage function for manufacturing information into the existing latch circuits that are already used for operation information. By combining both types of information storage in the same latch circuit resource, the patent eliminates the need for separate latch circuits for manufacturing information, thereby reducing the overall device area while maintaining the capability to store and read both types of information.
Solution Approach 2:
The latch circuits are designed to serve multiple functions: storing both operation information and manufacturing information. This multi-functionality allows the same hardware resource to handle different types of data storage needs, reducing the total amount of storage circuitry required in the device.
2Reliability
If information is stored in nonvolatile memory circuit, then the data can be retained, but a certain time is required to read out the information
Solution Approach 1:
The patent applies preliminary action by pre-loading operation information from the nonvolatile memory circuit into latch circuits during the power-on initialization phase. This preliminary transfer of frequently accessed operation information to faster latch circuits allows subsequent accesses to occur more quickly, reducing the effective read-out time for critical operations while maintaining the data retention benefits of nonvolatile storage.
3Ease of manufacture
If laser fuse is used to store information, then the information can be programmed at wafer level, but it is impossible to program after packaging and the area cannot be reduced
Solution Approach 1:
The patent replaces the physical laser fuse cutting mechanism with an electrical/electronic storage system using nonvolatile memory circuits and latch circuits. This substitution eliminates the need for physical fuse structures and laser programming equipment, allowing for more flexible programming approaches and reducing the area required for storage elements while maintaining wafer-level programmability.
Data Source
AI summary
A semiconductor device includes an internal command generation circuit suitable for generating a first internal command, a second internal command, and a third internal command based on a command/address signal. The semiconductor device also includes a driving signal generation circuit suitable for enabling a fuse driving signal for reading fuse data from a nonvolatile memory circuit, where the fuse signal is enabled while the second internal command is inputted a predetermined number of times. Further included is an output circuit suitable for outputting the fuse data in response to the third internal command.