Semiconductor Fuse Copper Migration Prevention

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Solution Overview

Problem

Copper (Cu) migration in semiconductor fuses during the blowing process can lead to incomplete cutting and reconnection of fuse ends, especially under high temperature and humidity conditions, affecting the reliability of semiconductor devices.

Innovation Solution

A semiconductor fuse design featuring copper (Cu) and aluminum (Al) fuse metals with a TiN conductive layer, where the aluminum fuse metal is formed in a recess wider than the laser spot to prevent copper migration, ensuring complete cutting and maintaining electrical isolation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If copper (Cu) is used as fuse metal, then electrical conductivity is improved, but copper migration occurs under high temperature and humidity conditions causing reconnection of fuse ends

Engineering Contradiction:
Improvefuse cutting reliabilityVSAvoidcopper migration
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

A barrier layer is introduced between the copper fuse metal and the surrounding environment. This intermediary layer prevents copper atoms from migrating while allowing the fuse to maintain its electrical conductivity function. The barrier layer acts as a mediator that blocks the harmful migration path without interfering with the electrical properties of the copper fuse.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The fuse structure is transformed from pure copper to a composite structure consisting of copper fuse metal combined with a barrier layer. This composite material approach allows the system to benefit from both the high electrical conductivity of copper and the migration-blocking properties of the barrier layer, resolving the contradiction between conductivity and migration resistance.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If laser energy is increased to ensure complete fuse cutting, then cutting effectiveness is improved, but copper migration is exacerbated due to higher temperature

Engineering Contradiction:
Improvefuse cutting completenessVSAvoidblowing temperature
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The barrier layer serves as a protective intermediary that allows the system to tolerate higher laser energies during the blowing process. By preventing copper migration even at elevated temperatures, the barrier layer enables complete fuse cutting to be achieved without risking reconnection, thus resolving the contradiction between cutting completeness and temperature control.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If fuse metal is completely evaporated during blowing, then clean cutting is achieved, but residue remains when evaporation is incomplete causing reconnection

Engineering Contradiction:
Improvecutting reliabilityVSAvoidfuse metal residue
Core Design Contradiction:
ReliabilityVSLoss of substance

Solution Approach 1:

The barrier layer acts as a protective intermediary that prevents residue formation and blocks migration paths. Even when copper evaporation is incomplete, the barrier layer prevents the residual copper from migrating and reconnecting the fuse ends, thus ensuring cutting reliability without requiring complete evaporation of the fuse metal.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively prevents copper migration, ensuring reliable fuse cutting and improving the yield of semiconductor devices by maintaining electrical isolation and preventing reconnection of fuse ends.

Implementation Method 1

the fuse of a failed cell is then cut by irradiating with a laser. In this case, the laser energy passes through the insulating layer without being absorbed because the insulating layer has the same properties as glass. Thus, most of the laser energy is absorbed by the fuse. The fuse is thermally expanded by the laser energy, and so the fuse is blown and cut.

Methodology Applied
Scientific EffectLaser heating: Laser

Implementation Method 2

The fuse is thermally expanded by the laser energy, and so the fuse is blown and cut.

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS8642399B2Fuse of semiconductor device and method of forming the same
Publication Date: 2014.02.04 SK HYNIX INC
  • US8642399B2 patent drawing
  • US8642399B2 patent drawing
  • US8642399B2 patent drawing

AI summary

A fuse of a semiconductor device includes first fuse metals formed over an underlying structure and a second fuse metal formed between the first fuse metals. Accordingly, upon blowing, the fuse metals are not migrated under conditions, such as specific temperature and specific humidity. Thus, reliability of a semiconductor device can be improved.