Semiconductor Fuse Detecting Structure for Status Monitoring
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Solution Overview
Problem
Semiconductor devices with programmable fuses face challenges in detecting the status of fuses, such as temperature and resistance, which is difficult through visual inspection and affects manufacturing efficiency and detection of latent damage.
Innovation Solution
A semiconductor device design incorporating a fuse and a transistor forming a detecting structure, where the fuse includes a first and second fuse head and a fuse area between them, electrically coupled to a control terminal and doped regions, allowing for electrical detection of fuse status.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If visual inspection is used to detect fuse status, then detection cost is low, but detection precision and ability to detect latent damage is insufficient
Solution Approach 1:
The patent introduces an intermediary detecting structure comprising a transistor and associated circuitry that mediates between the fuse and the detection system. This intermediary structure enables precise electrical detection of fuse status (integrity, resistance, temperature) without requiring complex external inspection equipment, thereby resolving the contradiction between detection precision and device complexity.
2Productivity
If electrical detecting structure is added to detect fuse status, then detection precision and manufacturing efficiency are improved, but device complexity increases
Solution Approach 1:
The patent merges the detecting structure with the existing fuse structure by integrating the transistor and detection circuitry directly at the fuse location. This consolidation enables manufacturing efficiency improvement through in-line electrical detection without requiring separate complex detection systems, thereby resolving the contradiction between productivity and device complexity.
3Reliability
If traditional fuse structure without detecting structure is used, then device complexity is low, but ability to detect latent damage is insufficient
Solution Approach 1:
The patent implements preliminary detection action by incorporating the detecting structure that can identify latent damage (integrity issues, resistance anomalies, temperature problems) in the fuse before final device assembly and operation. This preliminary detection capability enhances reliability by catching defects early, while the integrated design keeps the added complexity manageable.
Data Source
AI summary
A semiconductor device includes a substrate; an insulating layer positioned above the substrate, wherein the insulating layer has two ends; a first doped region formed in the substrate and positioned at one end of the two ends of the insulating layer; a second doped region formed in the substrate and positioned at the other end of the two ends of the insulating layer, wherein the second doped region is opposite to the first doped region; a control terminal positioned above the insulating layer; a first fuse head positioned above the control terminal and electrically coupled to the first doped region; a second fuse head positioned above the first fuse head; and a fuse area positioned between the first fuse head and the second fuse head.