Semiconductor Fuse Cutting via Dummy Contact Plug

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Solution Overview

Problem

The existing semiconductor repair processes using fuses are inefficient due to incomplete cutting, which can lead to unsuccessful replacement of defective cells with redundant cells, as precise cutting of fuses is required for successful repair.

Innovation Solution

A semiconductor device and method involving a fuse structure with a dummy contact plug that increases electromigration in specific areas, allowing for effective cutting of the fuse structure by forming conductive patterns and contact plugs to facilitate rapid and complete fuse disconnection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fuse is used for the repair process to replace defective cells with redundant cells, then the repair function is achieved, but the repair reliability is insufficient due to incomplete cutting of the fuse

Engineering Contradiction:
Improverepair reliabilityVSAvoidfuse cutting precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The fuse structure is pre-formed with a specific configuration including the fuse body, first contact plug, second contact plug, third contact plug, and conductive patterns before the repair process. This preliminary structuring enables more reliable and complete fuse cutting by providing multiple contact points and conductive paths that ensure thorough disconnection when activated.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The conductive patterns and additional contact plugs act as intermediaries to facilitate more reliable fuse cutting. These intermediary elements provide alternative pathways and contact points that ensure complete disconnection of the fuse, preventing the incomplete cutting problem that occurs with simple fuse structures.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If a simple fuse structure is used, then the device complexity is low, but the ease of manufacture is reduced due to the difficulty of achieving complete fuse cutting

Engineering Contradiction:
Improveease of fuse cuttingVSAvoidfuse structure complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The fuse structure is segmented into multiple components: fuse body, first contact plug, second contact plug, third contact plug, and conductive patterns. This segmentation allows the fuse cutting process to be more easily achieved by providing multiple discrete contact points that can be individually targeted and disconnected, simplifying the manufacturing process despite the increased structural complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The fuse structure extends into multiple dimensions with contact plugs positioned at different locations and conductive patterns laid out in specific geometries. This dimensional expansion provides multiple access points and cutting paths, making the fuse cutting process more manageable and reliable while distributing the complexity across different spatial dimensions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device enables rapid and effective cutting of the fuse structure, ensuring successful replacement of defective cells with redundant cells by enhancing electromigration in areas where the dummy contact plug is present, thus improving the repair process.

Implementation Method 1

A semiconductor device and method involving a fuse structure with a dummy contact plug that increases electromigration in specific areas, allowing for effective cutting of the fuse structure

Methodology Applied
Scientific EffectElectromigration:

Data Source

PatentUS8384131B2Semiconductor device and methods of forming the same
Publication Date: 2013.02.26 SAMSUNG ELECTRONICS CO LTD
  • US8384131B2 patent drawing
  • US8384131B2 patent drawing
  • US8384131B2 patent drawing

AI summary

The semiconductor device includes a fuse structure disposed on a substrate. An interlayer dielectric disposed on the fuse structure. A first contact plug, a second contact plug, and a third contact plug penetrate the interlayer dielectric and wherein each of the first contact plug, the second contact plug and the third contact plug are connected to the fuse structure. A first conductive pattern and a second conductive pattern are disposed on the interlayer dielectric. The first conductive pattern and the second conductive pattern are electrically connected to the first contact plug and second contact plug, respectively.