Semiconductor Fuse Structure for Stable Melting Location Control
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Solution Overview
Problem
Conventional semiconductor fuses made of polysilicon often experience inconsistent melting locations, leading to incomplete fusion and potential short-circuits due to heat dissipation issues, resulting in high defect rates and the need for costly and time-consuming quality checks.
Innovation Solution
A semiconductor device with a fuse structure where the length and width of the fuse body, along with the dimensions of conductive layers and their contact regions, are specifically designed to ensure the melting location is away from the conductive layers, preventing short-circuits and allowing for stable resistance adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the fuse body dimensions are not specifically designed, then the manufacturing process is simpler, but the melting location becomes inconsistent and may overlap with conductive layers causing short-circuits
Solution Approach 1:
The patent applies parameter changes by specifically designing the fuse body length (L1) to be within 1.8μm to 20μm and the conductive layer width (W3) to be within 6μm to 14μm. These dimensional parameters ensure that when electrical stress is applied, the melting location occurs away from the conductive layers, preventing short-circuits while maintaining manufacturing feasibility
Solution Approach 2:
The patent implements preliminary action by pre-defining the fuse body length and conductive layer width during the manufacturing stage. This preliminary dimensional design ensures that the melting location will be positioned away from conductive layers before the actual melting process occurs, preventing short-circuit issues in advance
2Reliability
If quality checks are performed on all fuses, then defect detection rate increases, but production time and costs increase
Solution Approach 1:
The patent implements preliminary action by designing the fuse structure with predetermined dimensions during manufacturing, ensuring reliable melting behavior before actual use. This preliminary design eliminates the need for extensive post-manufacturing quality checks, as the structure itself guarantees proper function
Solution Approach 2:
The patent applies self-service by designing the fuse body dimensions and conductive layer widths such that the fuse automatically melts at the correct location away from conductive layers without requiring external verification. The structure itself ensures proper operation, eliminating the need for additional quality control interventions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design stabilizes the melting process, reducing fuse defects and enabling reliable resistance adjustments, thus minimizing waste and costs associated with quality checks and improving the reliability of semiconductor products.
Implementation Method 1
when an electrical stress is applied between the two conductive layers (5A, 5B) to melt the fuse (3)
Data Source
AI summary
By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.