Semiconductor Fuse Structure Integrated in Metallization Layer
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Solution Overview
Problem
Conventional surface-mounted device (SMD) fuses on printed circuit boards have limited packing density and high costs, which are not efficiently addressed by existing semiconductor technologies.
Innovation Solution
A semiconductor device with a fuse structure integrated into the metallization layer on an anorganic isolation layer, allowing for a common interface and enabling miniaturization, reduced PCB area requirements, and precise control over fuse properties using semiconductor processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SMD fuses are soldered on a PCB board, then overcurrent protection function is achieved, but packing density is limited and costs are high
Solution Approach 1:
The fuse structure is merged with the semiconductor device's metallization layer, integrating the protection function directly into the chip rather than using a separate SMD component. This combines the fuse function with the existing metallization layers, eliminating the need for separate PCB mounting and reducing overall area.
Solution Approach 2:
The fuse structure utilizes the vertical dimension by forming it within the metallization layer stack, transitioning from a horizontal PCB-mounted component to a vertically-integrated structure within the chip's layered architecture, thereby reducing PCB footprint.
2Reliability
If SMD fuses are used, then overcurrent protection is provided, but manufacturing costs increase
Solution Approach 1:
The fuse structure is formed using the same metallization layer and fabrication processes as the semiconductor device itself, merging two manufacturing processes into one. This eliminates the need for separate SMD fuse procurement, PCB mounting operations, and associated assembly costs.
Solution Approach 2:
The metallization layer serves dual purposes: it provides both the functional interconnects for the semiconductor device and the fuse structure for overcurrent protection. This multi-functionality reduces the total component count and simplifies the manufacturing process.
3Area of moving object
If a common interface between metallization layer and anorganic isolation layer is created, then miniaturization is enabled, but manufacturing precision requirements increase
Solution Approach 1:
The fuse structure utilizes the existing interface between the metallization layer and anorganic isolation layer, merging these two structural elements to define the fuse geometry. This approach leverages already-formed interfaces rather than requiring additional precision-critical interfaces.
Solution Approach 2:
The metallization layer and anorganic isolation layer are formed in advance through standard semiconductor fabrication processes, creating a pre-defined interface that is then utilized for the fuse structure. This preliminary formation of layers with controlled interfaces reduces the precision burden on subsequent fuse formation steps.
Data Source
AI summary
A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.