Semiconductor Fuse Migration Prevention Module
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Solution Overview
Problem
Semiconductor apparatuses face reliability issues due to metal ions from cut fuses migrating under high temperature and humidity conditions, leading to short-circuiting and a deterioration in reliability during testing procedures like THB and HAST.
Innovation Solution
Incorporation of migration preventing modules, including a ground electrode, a floating electrode, and a power supply electrode, with insulation members to prevent metal ion migration, generating an electric field that inhibits ion migration between the anode and cathode electrodes of the fuses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cut fuses are exposed under high temperature and high humidity conditions, then metal ions migrate toward the cathode electrode, but the anode electrode becomes electrically connected to the cathode electrode causing short-circuiting
Solution Approach 1:
A blocking layer is introduced as an intermediary substance between the anode electrode and cathode electrode of the cut fuse. This blocking layer prevents metal ions from migrating across the fuse during high temperature and high humidity testing, thereby maintaining electrical isolation and preventing short-circuiting while allowing the fuse to undergo reliability testing.
2Reliability
If TBH and HAST testing procedures are performed to measure reliability, then the testing conditions are improved, but cut fuses are likely to change from cut state to uncut state
Solution Approach 1:
The blocking layer serves as a mediator that allows TBH and HAST testing to proceed under aggressive conditions while preventing the harmful effect of ion migration. This enables comprehensive reliability testing without compromising the stability of the fuse's cut state, as the blocking layer prevents metal ions from bridging the gap between electrodes.
3Reliability
If the anode electrode and cathode electrode are electrically connected due to ion migration, then the cut fuse changes to uncut state, but the reliability of the semiconductor apparatus deteriorates
Solution Approach 1:
The blocking layer acts as a protective intermediary that prevents metal ions from creating conductive paths between the anode and cathode electrodes. By blocking ion migration, it prevents short-circuiting and the resulting deterioration of semiconductor apparatus reliability during high temperature and high humidity testing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents the conversion of cut fuses to an uncut state, thereby enhancing the reliability of semiconductor apparatuses by reducing ion migration and maintaining electrical isolation between electrodes.
Implementation Method 1
generating an electric field that inhibits ion migration between the anode and cathode electrodes of the fuses
Implementation Method 2
each migration preventing module including: a ground electrode formed in the semiconductor chip to face the fuse with a first insulation member interposed therebetween
Data Source
AI summary
A semiconductor apparatus includes a semiconductor chip formed with cut fuses over one surface thereof; and migration preventing modules preventing occurrence of a phenomenon in which metal ions of the fuses migrate to cut zones of the fuses; each migration preventing module including: a ground electrode formed in the semiconductor chip to face the fuse with a first insulation member interposed therebetween; a floating electrode formed over the fuse with a second insulation member interposed therebetween to face the ground electrode with the fuse interposed therebetween; and a power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.