Semiconductor Fuse Structure for Plasma Charge Discharge
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Solution Overview
Problem
During the manufacturing of semiconductor devices, such as flash memory, electrical charges accumulate in the charge storage layer due to plasma formed during processes like dry etching or plasma chemical vapor deposition, leading to unintended trapping that cannot be easily erased, causing operational issues.
Innovation Solution
The implementation of a fuse structure or thermally variable resistor structure within the semiconductor device to facilitate the dissipation of electrical charges to an electrical ground or silicon substrate, reducing charge accumulation by physically cutting off the connection during normal operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processes (dry etching or plasma CVD) are used during manufacturing, then manufacturing precision and device fabrication are improved, but electrical charges accumulate in the charge storage layer causing programming errors
Solution Approach 1:
The patent extracts and removes the harmful electrical charges accumulated in the charge storage layer through a dedicated discharge process. A voltage is applied between the bit lines to generate plasma that neutralizes and removes the trapped charges, separating the charge removal function from the normal memory operation.
Solution Approach 2:
The patent performs charge discharge as a preliminary action before normal memory operations. By applying voltage between bit lines to remove accumulated charges before programming or reading operations, the system prevents programming errors from occurring in the first place.
2Reliability
If voltage is applied between bit lines to discharge charges, then charge accumulation is reduced, but device complexity increases due to additional discharge circuitry
Solution Approach 1:
The patent uses the existing bit lines of the memory device to perform the charge discharge function. By applying voltage between the same bit lines used for normal memory operations, the system utilizes its own structure for charge removal without requiring separate discharge electrodes or additional complex circuitry.
3Reliability
If fuse structure is used to cut off connection during normal operation, then charge accumulation is prevented, but manufacturing complexity increases
Solution Approach 1:
The patent implements a dynamic connection state using a fuse structure that transitions from connected to disconnected. During manufacturing, the fuse is intact allowing charge discharge; after manufacturing completion, the fuse is blown to isolate the charge storage layer, providing time-dependent connectivity control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces programming errors by ensuring that electrical charges accrued during manufacturing are discharged, thereby minimizing the accumulation of charges in the charge storage layer, enhancing the reliability of semiconductor devices.
Implementation Method 1
facilitate the dissipation of electrical charges to an electrical ground or silicon substrate
Implementation Method 2
thermally variable resistor structure
Data Source
AI summary
Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure.