Semiconductor Fuse Pattern Protection via EMC Layer and Negative Voltage
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Solution Overview
Problem
The movement of impurities to fuse patterns in semiconductor devices leads to degradation, which is not effectively addressed by existing repair methods that rely on redundancy cells or laser-based fuse blowing, resulting in reduced manufacturing yield and potential device failure.
Innovation Solution
A semiconductor device and manufacturing method that includes a fuse pattern over a semiconductor substrate, an epoxy mold compound (EMC) layer, and copper-based package substrates, where a negative voltage is applied to prevent metal ions from migrating to the EMC layer, thereby reducing impurities and their migration to the fuse pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of repair
If laser-based fuse blowing is used for repair, then defective cells can be replaced, but impurities are generated and migrate to the fuse pattern causing degradation
Solution Approach 1:
The patent introduces an EMC layer as an intermediary barrier between the fuse pattern and the package substrates. This layer prevents impurities (such as metal ions from copper substrates) from migrating to the fuse pattern, while still allowing the fuse blowing repair process to function. The EMC layer acts as a protective mediator that isolates the fuse pattern from harmful impurities generated during repair operations.
Solution Approach 2:
The patent extracts the harmful impurity migration pathway by placing the EMC layer between the copper package substrates and the fuse pattern. This extraction removes the direct contact path that would allow metal ions to migrate to the fuse pattern, thereby eliminating the harmful effect while preserving the repair functionality.
2Reliability
If copper package substrates are used, then electrical conductivity is improved, but metal ions migrate to the EMC layer and fuse pattern
Solution Approach 1:
The EMC layer serves as an intermediary barrier that prevents metal ions from copper package substrates from migrating to the fuse pattern. This allows the use of copper substrates for their excellent electrical conductivity while blocking the harmful ion migration through the protective EMC layer.
Solution Approach 2:
The patent applies preliminary protective action by placing the EMC layer before the metal ion migration can occur. This preventive measure stops the migration of metal ions from copper substrates to the fuse pattern before degradation can happen, allowing the copper substrates to be used without suffering from ion migration issues.
3Productivity
If fuse pattern is exposed to impurities, then manufacturing yield decreases due to device degradation, but adding protective layers increases device complexity
Solution Approach 1:
The EMC layer acts as a simple yet effective intermediary barrier that protects the fuse pattern from impurities. This single protective layer significantly improves manufacturing yield by preventing device degradation without substantially increasing device complexity, as it integrates into the existing package structure.
Solution Approach 2:
The patent applies protective quality locally at the critical area where impurity migration occurs (between the copper substrates and fuse pattern). The EMC layer is positioned specifically where needed to prevent ion migration, providing targeted protection without unnecessarily complicating the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the movement of impurities to the fuse pattern, enhancing the semiconductor device's properties and yield by minimizing the impact of impurities such as bismuth ions, thus preventing degradation and improving manufacturing efficiency.
Implementation Method 1
a first package substrate disposed over the EMC layer... where a negative voltage is applied to prevent metal ions from migrating to the EMC layer
Data Source
AI summary
A semiconductor device includes a fuse pattern disposed over a semiconductor substrate, an epoxy mold compound (EMC) layer disposed over the fuse pattern, a first package substrate disposed over the EMC layer, an insulating film disposed over the first package substrate, and a second package substrate disposed over the insulating film. To the first package substrate, a Vss voltage or a negative voltage lower than the Vss voltage is applied to prevent impurities from migrating to the fuse pattern.