Semiconductor Fuse Layout With Shared Contact for Higher Density
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Solution Overview
Problem
Current semiconductor structures face limitations in feature size and density, hindering further miniaturization and performance enhancement in integrated circuits, despite advancements in 3D integrated circuit layouts.
Innovation Solution
A semiconductor structure is designed with a substrate, transistors, fuses, a contact structure, and a dielectric layer, where the contact structure interconnects active regions of the fuses, reducing the feature size and increasing integration density by optimizing the placement and overlap of fuse regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional 2D integrated circuit layouts are used, then manufacturing and design are simpler, but feature size and density are limited
Solution Approach 1:
The patent implements a 3D integrated circuit layout with stacked chip designs, transitioning from traditional 2D layouts to three-dimensional architecture. Multiple device layers are stacked vertically with interconnect structures connecting different layers, enabling higher integration density without proportionally increasing lateral footprint.
Solution Approach 2:
The patent employs nested structures where smaller features are positioned within or between larger structural elements. The fuse regions are integrated within the semiconductor device structure, with contact structures penetrating through dielectric layers to connect fuse regions across different levels, creating a compact nested arrangement that maximizes space utilization.
2Quantity of substance
If feature size is reduced to increase density, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the fuse structure into multiple segments including first and second fuse regions, with associated contact structures for each segment. This segmentation allows for independent formation and testing of fuse portions, reducing the precision required for single-feature fabrication while achieving high overall density through multiple smaller, manageable components.
Solution Approach 2:
The patent introduces dielectric layers as intermediary structures between fuse regions and other device components. These dielectric layers provide isolation and structural support, enabling precise positioning of fuse regions without direct contact with underlying substrates, thereby facilitating tighter feature spacing with controlled manufacturing tolerances.
3Quantity of substance
If fuse regions are placed closer together to reduce feature size, then integration density increases, but electrical isolation becomes more difficult
Solution Approach 1:
The patent uses dielectric layers as intermediary isolation structures positioned between adjacent fuse regions and between fuse regions and underlying substrates. These dielectric layers provide electrical insulation, preventing unwanted current paths while allowing fuse regions to be placed in close proximity for high density integration.
Solution Approach 2:
The patent applies different material properties and structural configurations to different locations within the device. Dielectric layers with appropriate breakdown voltages are strategically placed between fuse regions, while conductive contact structures are formed only where needed for electrical connection, achieving both high density and reliable isolation through localized property optimization.
Data Source
AI summary
A semiconductor structure includes a substrate, first and second transistors, first and second fuses, a contact structure, and a dielectric layer. The substrate has first and second device regions, and a fuse region. The first and second transistors are respectively above the first and second device regions. The first fuse is electrically connected to the first transistor and includes a first fuse active region having first and second portions. The second fuse is electrically connected to the second transistor and includes a second fuse active region having third and fourth portions. The contact structure interconnects the second portion and the third portion, wherein the first portion and the fourth portion are on opposite sides of the contact structure. The dielectric layer is between the contact structure and the fuse region of the substrate.