Semiconductor Fuse State Detection via Crack-Assisted Cutting
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor technologies face challenges in accurately determining the state of fuses, particularly in cases where the fuse is not fully cut or experiences reconnection due to material migration, and the miniaturization of semiconductors increases the risk of short-circuiting, while existing methods require additional structures and voltage applications, leading to area increases.
Innovation Solution
A semiconductor device with a conductive fuse and a contacting target conductor region on the substrate, where a determination unit detects electrical disconnection or connection between the fuse and the conductor region, allowing for accurate cut state determination without the need for additional grounding connections, using a crack-assisted cutting technique to form a larger cut portion and maintain disconnection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional fuse cutting methods are used, then the fuse can be cut, but the accuracy of determining the cut state is insufficient when the fuse is not fully cut or experiences reconnection due to material migration
Solution Approach 1:
The invention divides the fuse structure into multiple segments: the fuse itself, a crack portion formed during cutting, and a contacting target conductor region. By segmenting the cutting process into crack formation and contact establishment phases, the system can more reliably detect the cut state through multiple indicators (crack presence and contact establishment) rather than relying on a single cutting action.
Solution Approach 2:
The invention introduces a contacting target conductor region as an intermediary element between the fuse and the detection system. This intermediary region receives conductive material during the cutting process, and its connection state serves as a reliable indicator of successful fuse cutting, even when the fuse itself shows ambiguous cutting states.
2Difficulty of detecting and measuring
If additional structures and voltage applications are used for fuse state detection, then detection capability is improved, but device area increases
Solution Approach 1:
The invention merges the fuse cutting function with the detection function by integrating the contacting target conductor region directly into the fuse structure. The same conductive material that forms during cutting automatically creates the detection signal, eliminating the need for separate detection structures and reducing overall device area.
Solution Approach 2:
The contacting target conductor region serves multiple functions: it acts as a target for conductive material during cutting, provides a detection signal when connected, and can be used for subsequent electrical connections. This multi-functionality reduces the need for additional dedicated detection structures.
3Area of stationary object
If miniaturization is pursued, then device size is reduced, but the risk of short-circuiting between interconnects increases
Solution Approach 1:
The invention converts the potentially harmful migration of conductive material into a beneficial detection mechanism. Instead of viewing material migration as a defect causing short-circuits, the system is designed to expect and utilize this migration to establish connection with the contacting target conductor region, transforming a harmful phenomenon into a useful signal for detecting successful fuse cutting.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the accuracy of fuse state determination, prevents area increase, and maintains disconnection effectively, even in miniaturized semiconductor devices, by using a contacting target conductor region and grounding the fuse through conventional interconnects, while the crack-assisted cutting technique ensures a stable and efficient cutting process.
Implementation Method 1
an electric fuse which is cut by utilizing a phenomenon in which the material constituting the electric fuse migrates by an electromigration
Implementation Method 2
heat generated in the portion to be cut when a current flows through the fuse is trapped or accumulated. It is described that thus, cutting is accelerated
Implementation Method 3
using a crack-assisted cutting technique to form a larger cut portion and maintain disconnection
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a fuse which comprises a conductive material and is formed on a semiconductor substrate, a contacting target conductor region which is placed around the fuse on the semiconductor substrate and formed so as to make electrical contact with the fuse through the conductive material constituting the fuse when a process for cutting the fuse is carried out, and a determination unit which detects whether or not the fuse is electrically disconnected, and detects whether or not the contacting target conductor region and the fuse are electrically connected, and determines that the fuse is in a cut state when electrical disconnection of said fuse is detected or electrical connection between said contacting target conductor region and said fuse is detected.