Semiconductor Fuse Trimming Short-Circuit Prevention
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Solution Overview
Problem
Conventional semiconductor devices experience short-circuit failures during laser trimming due to cracks in the insulating film caused by variations in film thickness and laser energy, leading to potential faults when both ends of the removed fuse come into contact with the semiconductor substrate.
Innovation Solution
A semiconductor device structure featuring a semiconductor substrate of a first conductivity type with buried short-circuit prevention regions of a second conductivity type, a strip-shaped fuse on top, and a passivation film with an opening exposing the insulating film over these regions, preventing direct contact and leakage paths during laser trimming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the insulating film thickness is reduced to enable precise laser trimming, then laser trimming precision is improved, but cracks are more easily formed in the insulating film due to thickness variation
Solution Approach 1:
Impurity-doped regions are预先 formed in the semiconductor substrate at positions where cracks are likely to occur during laser trimming. These regions act as cushioning elements that intercept and redirect crack propagation, preventing cracks from reaching the substrate surface and causing short-circuit failures, thereby enabling use of thinner insulating films for precise trimming.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure effectively suppresses short-circuit failures and prevents trimming faults by isolating the fuse edges with p-n junctions, ensuring that no leakage current path is formed between the fuse edges and the substrate, even when both edges contact the short-circuit prevention regions.
Implementation Method 1
the material of the fuse is vaporized by laser irradiation
Implementation Method 2
the material of the fuse is vaporized by laser irradiation
Implementation Method 3
a plurality of short-circuit prevention regions of a second conductivity type buried in an upper portion of the semiconductor substrate
Data Source
AI summary
A semiconductor device includes a semiconductor substrate of a first conductivity type, a plurality of short-circuit prevention-regions of a second conductivity type at an upper portion of the semiconductor substrate, a first insulating film on a top surface of the semiconductor substrate, a strip-shaped fuse on a top surface of the first insulating film spanning over the short-circuit prevention-regions, a second insulating film on a top surface of the fuse, and a passivation film on a top surface of the second insulating film and having an opening for laser trimming. The opening exposes the second insulating film above an area including the short-circuit prevention-regions.