Semiconductor Fuse Layout Reducing Wiring Layers
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Solution Overview
Problem
Existing semiconductor devices with fuse program circuits face challenges in reducing wiring resources and leak current, while also dealing with the complexity of copper diffusion and manufacturing dishing issues, particularly when the number of wiring layers is limited.
Innovation Solution
A semiconductor device design that includes a fuse element with a copper wire in a specific wiring layer, surrounded by a diffusion preventing wall, and a power supply wire disposed above the fuse to overlap it, using a separate power supply voltage for cutting mode to prevent copper diffusion and reduce wiring layers, along with a cut control circuit and determination circuit to manage the fuse state effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the fuse is surrounded by a preventing wall to prevent copper diffusion, then copper diffusion is suppressed, but the distance between wiring layers must be increased and the number of wiring layers increases
Solution Approach 1:
The patent combines the power supply wire function with the copper diffusion prevention function by positioning the power supply wire directly above the fuse in the same or adjacent wiring layer, eliminating the need for a separate preventing wall structure and reducing the total number of wiring layers required
Solution Approach 2:
The power supply wire serves dual purposes: it supplies power to the fuse and simultaneously acts as a barrier to prevent copper diffusion, making the wiring structure more efficient and reducing overall device complexity
2Ease of manufacture
If the power supply wire is extended near the fuse formation region in limited wiring layers, then wiring resources are consumed more than necessary
Solution Approach 1:
The patent utilizes the vertical dimension by stacking wiring layers efficiently, placing the power supply wire in a position that overlaps with the fuse vertically, thereby reducing the horizontal extension needed and conserving wiring resources
3Stability of the object's composition
If the same power supply voltage is used for fuse cutting and internal circuit operation, then voltage consistency is maintained, but leak current flows in the transistor for supplying fusing current
Solution Approach 1:
The patent segments the power supply system into two distinct power supply voltages: one for internal circuit operation and another for fuse cutting, allowing independent control of each function and preventing leak current while maintaining voltage consistency within each segment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the number of wiring layers and occupation area, minimizes leak current, and prevents adverse effects from copper diffusion, while simplifying the circuit configuration and manufacturing process.
Implementation Method 1
thermal diffusion of copper atoms configuring the fuse can be suppressed by the wall structure
Implementation Method 2
a fuse program circuit including a fuse element that stores fixed information... a line cutting type electric fuse element for cutting a fuse element by current
Data Source
AI summary
The present invention provides a semiconductor device realizing reliable cutting of a fuse without enlarging layout area of a fuse element and the reduced number of wiring layers of a preventing wall that prevents diffusion of fuse copper atoms. A fuse is formed by using a wire in a metal wiring layer as an upper layer in a plurality of metal wiring layers. Wires are disposed just above and just below a fuse each with a gap of at least two wiring layers. In an upper layer, a power wire that transmits power supply voltage is used as a part covering a preventing wall structure just above the fuse.