High-Power Semiconductor Assembly with Gap-Filling Thermal Interface
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Solution Overview
Problem
Existing assembly structures of high-power semiconductors and heat sinks are inadequate for timely heat dissipation, leading to overheating issues as power density increases, which can cause semiconductor component failure.
Innovation Solution
The proposed assembly structure includes high-power semiconductor modules mounted on printed circuit boards between primary heat-dissipating fins of a heat sink, with gap-filling layers made of heat-conductive and flexible materials to facilitate efficient heat transfer from the modules to the fins, ensuring effective heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high-power semiconductor components are used to increase power density, then power output is improved, but heat generation increases leading to overheating
Solution Approach 1:
A gap-filling layer made of heat-conductive material is introduced as an intermediary between the semiconductor module and the heat dissipation fin. This mediator fills the irregular gaps and improves thermal contact, enabling more effective heat transfer from the high-power semiconductor components to the heat sink without reducing power output.
Solution Approach 2:
The patent changes the physical and chemical parameters of the gap-filling material to optimize heat conduction. By selecting materials with specific thermal conductivity, flexibility, and adhesion properties, the system achieves improved heat transfer efficiency while accommodating the high heat generation from increased power density.
2Device complexity
If conventional heat sink structures are used, then device simplicity is maintained, but heat dissipation efficiency is insufficient
Solution Approach 1:
The gap-filling layer serves as a mediator that bridges the thermal interface between the semiconductor module and heat dissipation fin. This simple addition significantly improves heat dissipation efficiency by eliminating air gaps and improving thermal contact, without substantially increasing device complexity.
Solution Approach 2:
The patent employs composite material structures combining the semiconductor module, gap-filling layer, and heat dissipation fin. The gap-filling material acts as a composite interface layer that combines heat conduction, flexibility, and adhesion properties to optimize the thermal interface while maintaining structural integrity.
3Loss of energy
If gap-filling layers are added to improve heat conduction, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The gap-filling layer is a single intermediary component that provides multiple functions: improving thermal contact, accommodating surface irregularities, and ensuring mechanical stability. This unified mediator approach improves heat dissipation without requiring multiple separate components, thus limiting the increase in device complexity.
Solution Approach 2:
By carefully selecting the parameters of the gap-filling material (thermal conductivity, thickness, flexibility), the patent achieves optimal heat dissipation with minimal structural modification. The right parameter selection allows a single layer to provide sufficient thermal improvement without requiring complex multi-layer structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for quick and timely heat conduction and spreading across the heat-dissipating fins, preventing overheating and ensuring the normal operation of high-power semiconductor components.
Implementation Method 1
gap-filling layers may possess heat conductivity and flexibility... heat generated by the high-power semiconductor modules can quickly be conducted to the heat-dissipating fins
Implementation Method 2
heat sinks will usually be added to increase heat dissipation... heat generated by the high-power semiconductor components increases
Data Source
AI summary
An assembly structure of high-power semiconductors and heat sink includes a high-power semiconductor module and a heat sink. The high-power semiconductor module includes a printed circuit board, and high-power semiconductor components provided on the surfaces of the printed circuit board. The heat sink includes at least two primary heat-dissipating fins. The high-power semiconductor module is disposed between two adjacent primary heat-dissipating fins. A plurality of gap-filling layers are provided between the high-power semiconductor module and the primary heat-dissipating fins, and the gap-filling layers are tightly fitted on surfaces of the primary heat-dissipating fins.