Void-Free Semiconductor Gap Filling via Thermal Fluid Deposition

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Solution Overview

Problem

Conventional methods face challenges in filling gaps such as recesses, trenches, and vias in semiconductor devices without forming gaps or voids, which is critical for advanced semiconductor manufacturing.

Innovation Solution

A method involving a substrate exposed to a precursor and a reactant, forming a gap filling fluid comprising a metal or metalloid, which fills the gap through thermal reactions without the need for additional energy sources like plasma or radiation, and can include a conformal liner formation using cyclical deposition processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional gap filling methods are used, then gaps can be filled with material, but voids or gaps form in the filled structure

Engineering Contradiction:
Improvegap filling qualityVSAvoidvoid formation
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the physical and chemical parameters of the deposition process by using a metal precursor and reactant that form a liquid-like gap filling fluid at deposition temperature. This parameter change allows the material to flow into and completely fill the gap without forming voids, while maintaining conformal coverage. The key parameter change is transforming the deposited material from a standard solid film to a liquid-like fluid that can adapt to the gap geometry.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transitions by controlling the deposition process to form a material that exists in a liquid-like state during gap filling. The metal precursor and reactant combine to form a gap filling fluid that can flow and conform to the gap shape, then solidify to provide structural integrity. This phase transition approach ensures complete gap filling without void formation while maintaining manufacturing precision.

Inventive Principle:
Principle #36Phase transitions

2Device complexity

If thermal reactions are used for gap filling, then no additional energy sources are needed, but deposition control must be precise

Engineering Contradiction:
Improveenergy source requirementsVSAvoiddeposition control
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent replaces complex energy delivery systems (plasma generators, radiation sources) with a simpler thermal reaction system. By using a metal precursor and reactant that undergo spontaneous thermal reactions at deposition temperature, the process eliminates the need for additional energy sources while maintaining precise deposition control through chemical reaction engineering.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If conformal liner deposition is achieved, then gap filling quality improves, but process complexity increases

Engineering Contradiction:
Improveconformal coverageVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges the conformal liner deposition and gap filling operations into a single integrated process step. By using a metal precursor and reactant system that forms a liquid-like gap filling fluid, the process achieves both conformal coverage on sidewalls and complete gap filling simultaneously, eliminating the need for separate liner deposition and gap filling steps.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively fills gaps with high-quality materials, avoiding seams or voids, and allows for conformal liner deposition, enhancing semiconductor device manufacturing efficiency.

Implementation Method 1

forming a gap filling fluid comprising a metal or metalloid, which fills the gap through thermal reactions without the need for additional energy sources like plasma or radiation

Methodology Applied
Scientific EffectThermal reactions: Exothermic Reaction

Implementation Method 2

The patent utilizes phase transitions by controlling the deposition process to form a material that exists in a liquid-like state during gap filling. The metal precursor and reactant combine to form a gap filling fluid that can flow and conform to the gap shape, then solidify to provide structural integrity.

Methodology Applied
Scientific EffectPhase transitions: Phase Change

Data Source

PatentUS12406881B2Methods and systems for filling a gap
Publication Date: 2025.09.02 ASM IP HLDG BV
  • US12406881B2 patent drawing
  • US12406881B2 patent drawing
  • US12406881B2 patent drawing

AI summary

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.