Semiconductor Gas Distributor with Segmented Pipelines
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Solution Overview
Problem
Existing gas distribution systems in semiconductor technology face challenges in uniformly depositing thin films due to residue buildup from sticky reaction gases, leading to non-uniform film thickness and potential chemical vapor deposition at gas outlets.
Innovation Solution
A gas distributor with a unique design featuring a gas distribution pipeline group, a first gas inlet pipeline, a gas distribution chamber, and second gas inlet and outlet pipelines, where the gas distribution chamber facilitates better diffusion and purging of reaction gases, and the staggered arrangement of outlet pipelines ensures balanced gas pressure and residue prevention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional gas distribution pipeline is used, then the structure is simple, but residue buildup occurs from sticky reaction gases leading to non-uniform film thickness
Solution Approach 1:
The gas distribution system is segmented into two separate pathways: a first gas distribution pipeline for easily diffusing gases and a second gas distribution pipeline for sticky, hard-to-purge gases. This segmentation prevents residue buildup by directing different gas types through dedicated channels, improving film uniformity without requiring complete redesign of the entire distribution system.
Solution Approach 2:
The second gas distribution pipeline is extracted as a separate component specifically designed to handle sticky reaction gases that are difficult to purge. By isolating this problematic gas flow from the main distribution system, the patent prevents residue buildup at gas outlets while maintaining the overall simplicity of the conventional gas distributor structure.
2Reliability
If a single gas distribution pipeline is used, then the device complexity is low, but residue buildup occurs leading to chemical vapor deposition at gas outlets
Solution Approach 1:
The gas distribution system is divided into functionally separate pipelines: the first pipeline handles easily diffusing reaction gases while the second pipeline is dedicated to sticky, hard-to-purge gases. This functional segmentation prevents chemical vapor deposition by ensuring that problematic gases are managed through a specialized pathway, enhancing system reliability without excessive complexity.
Solution Approach 2:
The second gas distribution pipeline acts as an intermediary component specifically designed to manage and transport sticky reaction gases that are difficult to purge. This intermediary structure prevents direct contamination of the main gas distribution system, thereby preventing chemical vapor deposition at gas outlets while adding only one additional pipeline component.
3Manufacturing precision
If reaction gases are not properly purged, then the gas distribution system is simple, but non-uniform film thickness results due to residue buildup
Solution Approach 1:
The gas distribution system is segmented into separate pipelines for different gas types, with the second pipeline specifically designed for sticky gases that require thorough purging. This segmentation enables targeted purging operations for each gas type, ensuring complete removal of residues and achieving uniform film thickness without complicating the overall system operation.
Solution Approach 2:
The second gas distribution pipeline is extracted as a dedicated pathway for sticky, hard-to-purge gases. This extraction allows for specialized purging procedures to be applied specifically to this pipeline, ensuring complete removal of residues that would otherwise cause non-uniform film deposition, while keeping the purging process for other gases unchanged.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved gas distributor enhances the uniformity of thin film deposition by effectively diffusing and purging both easily diffusing and sticky reaction gases, preventing residue buildup and ensuring consistent film thickness across the substrate.
Implementation Method 1
A gas distribution chamber is located above the gas distribution pipeline group and arranged surrounding the first gas inlet pipeline... A gas outlet of the second gas inlet pipeline is communicated with a gas inlet of the gas distribution chamber
Implementation Method 2
a purge gas enters the reaction chamber to remove the remaining reaction precursor and a by-product
Data Source
AI summary
A gas distributor of a semiconductor apparatus comprising a distributor body. The distributor body includes a gas outlet end surface, a gas distribution pipeline group, a first gas inlet pipeline, a plurality of first gas outlet pipeline, a gas distribution chamber, a second gas inlet pipeline, and a plurality of second gas outlet pipelines. A gas outlet end of the first gas inlet pipeline is communicated with a gas inlet of the gas distribution pipeline group. Gas inlet ends of the plurality of first gas outlet pipelines are communicated to a plurality of gas outlets of the gas distribution pipeline group in a one-to-one correspondence. The gas distribution chamber is located above the gas distribution pipeline group and arranged surrounding the first gas inlet pipeline.


