Semiconductor Gas Flow Control for Stable Chamber Pressure

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Solution Overview

Problem

Variations in environmental conditions surrounding the semiconductor wafer manufacturing equipment cause unstable gas pressure in the reaction chamber, potentially leading to processing failures during semiconductor wafer manufacturing.

Innovation Solution

A system comprising sensors and a processor is used to monitor environmental parameters and dynamically control the gas flow by adjusting the valve position to maintain stable gas pressure, compensating for changes in environment conditions and the number of activated chambers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If gas flow is provided from a gas source to semiconductor wafer manufacturing equipment, then the processing can be performed, but environmental condition variations cause gas pressure instability in the reaction chamber

Engineering Contradiction:
Improvegas pressure stabilityVSAvoidenvironmental condition variations
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The system continuously monitors the actual gas pressure in the reaction chamber using a pressure sensor and compares it with the target pressure value. Based on the pressure difference, the control unit automatically adjusts the valve opening degree to increase or decrease gas flow, forming a closed-loop feedback control system that maintains stable gas pressure despite environmental variations

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs self-regulation by automatically detecting pressure deviations and adjusting the gas flow valve without external intervention. The control unit processes the pressure signal and autonomously modifies the valve position to maintain the desired pressure level, enabling the system to compensate for environmental changes independently

Inventive Principle:
Principle #25Self-service

2Adaptability or versatility

If the valve opening degree is fixed, then the system is simple to operate, but it cannot compensate for environmental condition changes

Engineering Contradiction:
Improveenvironmental adaptation capabilityVSAvoidcontrol system complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The control unit receives real-time pressure feedback from the sensor and automatically adjusts the valve opening degree based on the pressure difference from the target value. This feedback mechanism enables the system to adapt to environmental changes dynamically while maintaining a relatively simple control architecture

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system replaces manual valve adjustment with an automated electronic control system. The control unit processes sensor signals and actuates the valve electrically, eliminating the need for manual intervention and enabling automatic adaptation to environmental variations without significant complexity increase

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS11929263B2Method and system for manufacturing semiconductor
Publication Date: 2024.03.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11929263B2 patent drawing
  • US11929263B2 patent drawing
  • US11929263B2 patent drawing

AI summary

The present disclosure provides a semiconductor manufacturing method and a system therefore. The semiconductor manufacturing method includes: providing a gas from a container through an outlet to a semiconductor wafer manufacturing equipment, wherein a control valve is connected to the outlet to control a gas flow; retrieving a set of parameters corresponding to the gas flow; and determining a nominal position of the control valve by incorporating the set of parameters through a processor in order to provide a desired flow passage into the semiconductor wafer manufacturing equipment, wherein the semiconductor wafer manufacturing equipment includes a plurality of independent reaction chambers, wherein each reaction chamber is individually supplied with a gas pipe, and each gas pipe receives the gas from the container.