Semiconductor Gas Supply Unit Flow Control
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Solution Overview
Problem
Semiconductor manufacturing devices face challenges in accurately controlling the flow rate of mixed gases due to control errors in mass flow controllers, leading to inconsistent pressure and flow rates, which affects the formation of thin films.
Innovation Solution
The semiconductor manufacturing device incorporates a supply gas unit with multiple supply pipes, a collective pipe, distribution pipes, and controllers to adjust flow rates and pressures, ensuring accurate distribution of mixed gases into the chamber for thin film formation, utilizing raw material flow rate controllers, pressure controllers, and distribution flow rate controllers to maintain target flow rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If mass flow controllers are used to control gas flow rates in a conventional semiconductor manufacturing device, then gas flow can be regulated, but control errors occur leading to inconsistent pressure and flow rates
Solution Approach 1:
The patent introduces a feedback mechanism where pressure sensors monitor the actual pressure of mixed gas in the reaction chamber, and this pressure information is fed back to the control unit. The control unit then adjusts the flow rates of individual gases based on the pressure feedback, creating a closed-loop control system that compensates for control errors and maintains consistent pressure and flow rates.
Solution Approach 2:
The patent changes the control parameter from direct flow rate control to pressure-based control. By monitoring pressure changes in the reaction chamber and adjusting gas flow rates accordingly, the system maintains more consistent process conditions. The control unit modifies flow rates based on detected pressure variations, ensuring stable thin film formation despite variations in individual gas flow controllers.
2Ease of operation
If multiple gases are mixed in a collective pipe and distributed to multiple gas introduction pipes, then gas distribution is achieved, but flow rate control precision deteriorates due to mixed gas pressure variations
Solution Approach 1:
The patent segments the gas distribution system into individual gas supply paths with separate flow control. Instead of mixing gases in a collective pipe and distributing them, the system supplies each gas type through separate pipes with individual mass flow controllers. This segmentation allows precise control of each gas flow rate independently, eliminating the flow rate control precision deterioration caused by mixing and pressure variations in a collective pipe.
Solution Approach 2:
The patent applies local quality control by providing individual flow control for each gas type. Each gas introduction pipe has its own mass flow controller, allowing localized adjustment of gas flow rates according to specific process requirements. This enables precise control of each gas's contribution to the reaction chamber, ensuring uniform flow rate distribution and consistent thin film formation across different locations.
3Measurement precision
If individual gas flow rates are controlled separately, then flow rate precision is maintained, but system complexity increases due to multiple controllers
Solution Approach 1:
The patent applies universality by using a single reaction chamber pressure sensor to monitor the combined effect of multiple gas flows. The control unit processes pressure information from this universal sensor and adjusts multiple gas flow rates simultaneously based on the same feedback signal. This approach maintains flow rate precision while reducing the number of separate sensors and controllers needed, as one pressure measurement serves the control function for all gas types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables precise control of gas flow rates, improving the in-plane uniformity and depth direction uniformity of thin films formed on substrates, while also being economical by reusing mixed gas pressure adjustments.
Implementation Method 1
a raw material flow rate controller that is installed on each of the multiple supply pipes, and controls a flow rate
Implementation Method 2
a collective pipe that is connected to the multiple supply pipes, and generates a mixed gas
Implementation Method 3
a pressure controller that is installed on one distribution pipe, and adjusts a mixed gas pressure
Implementation Method 4
a distribution flow rate controller that is installed on a distribution pipe different from the distribution pipe provided with the pressure controller, and controls a flow rate of the mixed gas
Implementation Method 5
The supply gas unit introduces the supply gas into the chamber
Data Source
AI summary
A semiconductor manufacturing device includes: a thin film formation portion that includes a chamber; and a supply gas unit that introduces a supply gas into the chamber. The supply gas unit includes: multiple supply pipes; a raw material flow rate controller that is installed on each of the multiple supply pipes, and controls a flow rate; a collective pipe that is connected to the multiple supply pipes, and generates a mixed gas; multiple distribution pipes connected to a downstream side of the collective pipe; a pressure controller that is installed on one distribution pipe, and adjusts a mixed gas pressure; and a distribution flow rate controller that is installed on a distribution pipe different from the distribution pipe provided with the pressure controller, and controls a flow rate of the mixed gas.