Semiconductor Gas Temperature Control via External Pre-heating
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in accurately controlling the temperature of gases within processing containers, particularly in low-temperature processes, where traditional heaters can deteriorate film quality and increase heat loads, and existing systems lack direct control over gas temperature in the pipes.
Innovation Solution
An information processing system is implemented that includes a temperature sensor for measuring gas temperature in the pipe and a second heater for direct temperature control, allowing for precise temperature adjustment of the gas introduced into the processing container, reducing the need for heaters within the container and minimizing heat loads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional heaters are used within the processing container to control gas temperature, then the temperature control function is provided, but film quality deteriorates and heat load increases
Solution Approach 1:
A separate temperature control unit is introduced as an intermediary device, positioned outside the processing container, to control the gas temperature before it enters the container. This mediator approach allows temperature control without placing heating elements inside the container, thereby avoiding film quality deterioration while still achieving the desired gas temperature.
Solution Approach 2:
The temperature control function is segmented from the processing container. Instead of using a single integrated heater inside the container, the system divides the temperature control into a separate external unit that pre-heats or cools the gas before it enters the processing chamber, thus isolating the heat source from the film formation area.
2Temperature
If traditional heaters are used within the processing container to control gas temperature, then the temperature control function is provided, but heat load within the container increases
Solution Approach 1:
A separate temperature control unit is introduced as an intermediary device, positioned outside the processing container, to control the gas temperature before it enters the container. This mediator approach allows temperature control without placing heating elements inside the container, thereby avoiding film quality deterioration while still achieving the desired gas temperature.
Solution Approach 2:
The gas temperature is adjusted in advance before the gas enters the processing container. The separate temperature control unit performs preliminary heating or cooling of the gas in a dedicated section, so that when the gas enters the processing container, the temperature control is already achieved without requiring additional heating within the container, thus reducing heat load.
3Device complexity
If gas temperature is not directly controlled in the pipe, then the system is simpler, but temperature control accuracy is insufficient
Solution Approach 1:
The patent replaces direct mechanical temperature measurement and control within the container with a non-contact or indirect measurement approach using radiation or conduction through the pipe wall. This substitution allows temperature monitoring and control without complex internal sensors, maintaining system simplicity while improving measurement accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more accurate temperature control of gases, improves film quality, and reduces heat loads within the processing container, facilitating the formation of high-quality films in semiconductor manufacturing by integrating gas temperature control into the simulation model and process parameters.
Implementation Method 1
a temperature sensor for measuring a temperature of the gas introduced into the processing container
Implementation Method 2
a second heater for heating the gas in the pipe
Data Source
AI summary
An information processing apparatus executes a simulation of a process state being executed in a semiconductor manufacturing apparatus using a simulation model of the semiconductor manufacturing apparatus. The information processing apparatus includes: a physical sensor data acquisition unit that acquires physical sensor data measured at the semiconductor manufacturing apparatus that executes a process according to a process parameter; and a simulation execution unit that executes a simulation by the simulation model according to the process parameter including the physical sensor data, and calculate virtual sensor data and virtual process result data. The physical sensor data acquired by the physical sensor data acquisition unit includes a temperature of a gas introduced into the semiconductor manufacturing apparatus that executes the process.