Semiconductor Manufacturing Apparatus Gas Temperature Control
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Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in achieving in-plane uniformity during chemical liquid processes, particularly with larger wafers, due to temperature unevenness and physical limitations in operation conditions, leading to insufficient processing uniformity and increased chemical liquid consumption.
Innovation Solution
A semiconductor manufacturing apparatus incorporating a chuck stage, stage rotation mechanism, chemical liquid nozzle, gas nozzle, gas temperature controller, and on-off valve to control gas temperature, ensuring uniform temperature distribution across the wafer by switching between temperature-controlled and ambient gases, thereby maintaining in-plane uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the discharge flow rate of chemical liquid is increased to suppress temperature drop, then the temperature uniformity is improved, but the chemical liquid consumption is increased
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the discharge flow rate of the chemical liquid based on the wafer rotation speed. When the wafer rotation speed is low (which causes temperature drop at the periphery), the discharge flow rate is increased to compensate. This dynamic parameter adjustment maintains temperature uniformity without unnecessarily increasing chemical liquid consumption during normal operation when temperature control is not critical.
Solution Approach 2:
The patent implements a feedback control mechanism where the discharge flow rate of the chemical liquid is automatically adjusted according to the detected wafer rotation speed. The control unit monitors the rotation speed and modifies the discharge flow rate accordingly, creating a closed-loop feedback system that maintains optimal temperature uniformity while minimizing chemical liquid consumption.
2Temperature
If the scan speed of chemical liquid nozzle is increased to widen scan range, then the temperature uniformity is improved, but the device complexity and operation complexity are increased
Solution Approach 1:
The patent extracts the temperature control function from the mechanical nozzle scanning system and transfers it to the chemical liquid discharge flow rate control. Instead of relying on complex nozzle scanning mechanisms to achieve temperature uniformity, the system uses a simpler approach of adjusting the discharge flow rate based on wafer rotation speed, thereby reducing device and operational complexity.
3Manufacturing precision
If the wafer rotation speed is increased to improve chemical liquid spreading, then the processing uniformity is improved, but the temperature control precision is worsened due to centrifugal effects
Solution Approach 1:
The patent applies parameter changes by establishing a dynamic relationship between wafer rotation speed and chemical liquid discharge flow rate. When the wafer rotation speed is increased to improve chemical liquid spreading, the system compensates by adjusting the discharge flow rate to account for centrifugal effects that may cause temperature variations, thereby maintaining temperature control precision while achieving processing uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus ensures sufficient in-plane uniformity in chemical liquid processes, even under severe physical limitations, by maintaining uniform temperature across the wafer, reducing chemical liquid consumption, and optimizing processing conditions.
Implementation Method 1
The gas temperature controller controls a temperature of the gas to be supplied to the gas nozzle
Implementation Method 2
ambient temperature gas supplied from under a lower surface of a chuck stage is released while taking heat from the chemical liquid on the upper surface of the wafer through the wafer that is high in thermal conductivity
Data Source
AI summary
A semiconductor manufacturing apparatus includes a chuck stage, a stage rotation mechanism, a chemical liquid nozzle, a chemical liquid nozzle scan mechanism, a lower surface gas nozzle, a gas temperature controller configured to control a temperature of gas to be supplied to the lower surface gas nozzle, a gas bypass pipe configured to allow the gas to be supplied to the lower surface gas nozzle without causing the gas to pass through the gas temperature controller, and first and second on-off valves configured to open and shut to allow either of the gas whose temperature has been controlled by the gas temperature controller and the gas passing through the gas bypass pipe to be supplied to the lower surface gas nozzle. Actuation of the first and second on-off valves allows a temperature of the gas passing through the lower surface gas nozzle to be changed.