Semiconductor Gas Treatment Catalytic Reactor
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Solution Overview
Problem
The increasing integration of semiconductor devices leads to higher amounts of semiconductor process gases being used, resulting in unreacted gases forming powdery byproducts through unintended chemical reactions, which can clog equipment and reduce production efficiency.
Innovation Solution
An apparatus comprising a catalytic reactor with a differential pressure buffer and a space velocity controller, equipped with a catalyst that oxidizes or reduces semiconductor process gases, preventing the formation of powdery byproducts by converting them into harmless substances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the amount of semiconductor process gas is increased to support high integration, then film uniformity is improved, but powdery byproducts are formed through unintended chemical reactions
Solution Approach 1:
The patent introduces a catalytic reactor that converts the harmful unreacted process gas into beneficial products through catalytic oxidation. The catalyst (precious metal such as Pt, Pd, or Rh supported on alumina or silica gel) transforms the unwanted residual gas into water and carbon dioxide, eliminating powdery byproduct formation while maintaining the high gas flow rates needed for film uniformity
Solution Approach 2:
The catalytic reactor acts as an intermediary component between the process chamber and exhaust system. It provides a controlled environment where catalytic conversion occurs, mediating the transformation of harmful unreacted process gas into harmless substances before discharge, thus resolving the contradiction between maintaining high process gas amounts and preventing byproduct formation
2Object-generated harmful factors
If a catalytic reactor is introduced to convert unreacted gas, then byproduct formation is inhibited, but pressure drop increases due to the catalyst bed
Solution Approach 1:
The patent employs porous support materials (alumina or silica gel) with controlled pore structures to carry the catalyst. These porous materials provide high surface area for catalytic activity while maintaining adequate gas flow characteristics, reducing pressure drop compared to dense catalyst beds. The porous structure allows efficient mass transfer and minimizes flow resistance
Solution Approach 2:
The patent optimizes catalyst parameters including particle size (0.1-5mm), bed height (50-200mm), and void fraction (0.3-0.7) to balance conversion efficiency and pressure drop. By controlling these parameters, the system achieves effective catalytic conversion while maintaining acceptable pressure characteristics for continuous operation
3Productivity
If catalyst particle size is reduced to increase surface area, then catalytic reaction efficiency is improved, but pressure drop and flow resistance increase
Solution Approach 1:
The patent systematically optimizes catalyst particle size within the range of 0.1-5mm to achieve the optimal balance between reaction efficiency and flow characteristics. This parameter optimization ensures sufficient surface area for high catalytic activity while preventing excessive pressure drop that would hinder gas flow and increase operational costs
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively inhibits the formation of powdery byproducts, reducing equipment clogging and increasing semiconductor production efficiency by ensuring smooth catalytic reactions and efficient gas treatment.
Implementation Method 1
a catalytic reaction portion including a catalyst and configured to bring the treatment target gas into contact with the catalyst
Implementation Method 2
reacting the semiconductor process gas with the catalyst in the catalytic reactor such that the semiconductor process gas is oxidized or reduced
Implementation Method 3
reacting the semiconductor process gas with the catalyst in the catalytic reactor such that the semiconductor process gas is oxidized or reduced
Implementation Method 4
a differential pressure buffer portion, including a filter, configured to reduce a pressure drop of the treatment target gas
Data Source
AI summary
An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.