Semiconductor Chamber Gas Wall Isolation for Faster ALD Purging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor processing apparatuses using atomic layer deposition (ALD) technology face productivity issues due to long purging times, and sealing parts have limited service life and applicability, especially at high temperatures.
Innovation Solution
A semiconductor processing apparatus with a process chamber divided into a process area and a transfer area, utilizing a flow guide structure attached to the base to form a gas wall and an exhaust structure to discharge gases, thereby preventing process gas from entering the transfer area and reducing purging time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the purging time is extended to remove reaction precursor, then particle formation is prevented, but productivity is reduced
Solution Approach 1:
The process chamber is divided into a process area and a transfer area by a partition plate, allowing independent control and purging of each area. This segmentation enables faster overall purging by treating areas separately rather than requiring complete chamber purging.
Solution Approach 2:
A gas curtain is introduced as an intermediary barrier between the process area and transfer area. The gas curtain actively prevents process gas diffusion through the gap, replacing passive extended purging time with an active protective mechanism that enables faster cycling.
2Reliability
If a partition plate is added to divide the process chamber, then process gas diffusion is reduced, but complete isolation cannot be achieved due to gaps
Solution Approach 1:
A gas curtain is introduced as an intermediary barrier between the process area and transfer area. The gas curtain actively prevents process gas diffusion through the gap, replacing passive extended purging time with an active protective mechanism that enables faster cycling.
Solution Approach 2:
A flow guide structure connected to a gas supply source introduces a gas curtain through the gap between the partition plate and base. This pneumatic approach uses gas flow to dynamically seal the gap, achieving complete isolation without mechanical contact.
3Reliability
If sealing parts such as bellows or sealing rings are used to achieve complete physical isolation, then process gas diffusion is prevented, but particle pollution and maintenance issues arise
Solution Approach 1:
A flow guide structure connected to a gas supply source introduces a gas curtain through the gap between the partition plate and base. This pneumatic approach uses gas flow to dynamically seal the gap, achieving complete isolation without mechanical contact.
Solution Approach 2:
The patent replaces mechanical sealing systems (bellows, sealing rings) with a gas curtain system. This substitution eliminates mechanical wear, particle generation from sealing surfaces, and the need for maintenance while achieving equivalent or superior isolation performance.
4Reliability
If sealing parts are used for physical isolation, then complete isolation is achieved, but applicability to high-temperature processes is limited
Solution Approach 1:
A flow guide structure connected to a gas supply source introduces a gas curtain through the gap between the partition plate and base. This pneumatic approach uses gas flow to dynamically seal the gap, achieving complete isolation without mechanical contact.
Solution Approach 2:
The patent replaces mechanical sealing systems (bellows, sealing rings) with a gas curtain system. This substitution eliminates mechanical wear, particle generation from sealing surfaces, and the need for maintenance while achieving equivalent or superior isolation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively shortens the purging time, improves productivity, eliminates the need for sealing parts, and enhances applicability to high-temperature processes, reducing maintenance costs and extending equipment lifespan.
Implementation Method 1
the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber
Implementation Method 2
An exhaust structure is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure
Data Source
Figure 1~2
Figure 3
Figure 4
AI summary
The present disclosure provides a semiconductor processing apparatus. The semiconductor processing apparatus includes a process chamber, a gas intake device, a base, and a flow guide structure. The process chamber includes a process area and a transfer area arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for passing a process gas into the process area. The base is vertically movable and is disposed in the transfer area for carrying a wafer. The flow guide structure is connected to a gas supply source, and is fixedly attached to the base; when the base is located at a process area, the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area. An exhaust structure is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position. The embodiments of the present disclosure achieve a complete isolation between the process area and the transfer area, thereby substantially shortening the purging time of the process chamber to increase production capacity.